All Transistors. BFP740ESD Datasheet

 

BFP740ESD Datasheet, Equivalent, Cross Reference Search

Type Designator: BFP740ESD

SMD Transistor Code: T7*

Material of Transistor: SiGe

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 0.16 W

Maximum Collector-Base Voltage |Vcb|: 4.9 V

Maximum Collector-Emitter Voltage |Vce|: 4.2 V

Maximum Collector Current |Ic max|: 0.045 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 45000 MHz

Collector Capacitance (Cc): 0.08 pF

Forward Current Transfer Ratio (hFE), MIN: 160

Noise Figure, dB: -

Package: SOT343

BFP740ESD Transistor Equivalent Substitute - Cross-Reference Search

 

BFP740ESD Datasheet (PDF)

 ..1. Size:519K  infineon
bfp740esd.pdf

BFP740ESD
BFP740ESD

BFP740ESDSiGe:C NPN RF bipolar transistorProduct descriptionThe BFP740ESD is a wideband NPN RF heterojunction bipolar transistor (HBT) with anintegrated ESD protection.Feature list Unique combination of high end RF performance and robustness:21 dBm maximum RF input power, 2 kV ESD robustness (HBM) due to integrated protection circuits NFmin = 0.65 dB at 2.4 GHz and 0.9 dB

 8.1. Size:1510K  infineon
bfp740f.pdf

BFP740ESD
BFP740ESD

BFP740FLow Noise Silicon Germanium Bipolar RF TransistorData SheetRevision 2.0, 2015-03-12RF & Protection DevicesEdition 2015-03-12Published byInfineon Technologies AG81726 Munich, Germany 2015 Infineon Technologies AGAll Rights Reserved.Legal DisclaimerThe information given in this document shall in no event be regarded as a guarantee of conditions or characteristi

 8.2. Size:627K  infineon
bfp740fesd.pdf

BFP740ESD
BFP740ESD

BFP740FESDSiGe:C NPN RF bipolar transistorProduct descriptionThe BFP740FESD is a wideband NPN RF heterojunction bipolar transistor (HBT) with anintegrated ESD protection.Feature list Unique combination of high end RF performance and robustness:21 dBm maximum RF input power, 2 kV ESD robustness (HBM) due to integrated protection circuits NFmin = 0.6 dB at 2.4 GHz and 0.8 dB

 8.3. Size:658K  infineon
bfp740.pdf

BFP740ESD
BFP740ESD

BFP740SiGe:C NPN RF bipolar transistorProduct descriptionThe BFP740 is a wideband NPN RF heterojunction bipolar transistor (HBT).Feature list Low noise figure NFmin = 0.85 dB at 5.5 GHz, 3 V, 6 mA High gain Gms = 19.5 dB at 5.5 GHz, 3 V, 15 mA OIP3 = 24.5 dBm at 5.5 GHz, 3 V, 15 mAProduct validationQualified for industrial applications according to the relevant tests

 8.4. Size:1761K  kexin
bfp740.pdf

BFP740ESD
BFP740ESD

SMD Type TransistorsNPN TransistorsBFP740 (KFP740)Uint: mmSOT-3430.9 0.10.22 Features 0.1 MAX.1.30.1 High gain ultra low noise RF transistorA4 3 High maximum stable gain Gold metallization for extra high reliability0.15 150 GHz fT-Silicon Germanium technology1 2+0.1 +0.1 Outstanding noise figure F = 0.5 dB at 1.8 GHz0.30.15

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , C3198 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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