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BFP740F . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BFP740F

Código: R7*

Material: SiGe

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.16 W

Tensión colector-base (Vcb): 13 V

Tensión colector-emisor (Vce): 4 V

Tensión emisor-base (Veb): 1.2 V

Corriente del colector DC máxima (Ic): 0.045 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (ft): 45000 MHz

Capacitancia de salida (Cc): 0.08 pF

Ganancia de corriente contínua (hfe): 160

Paquete / Cubierta: TSFP4-1

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BFP740F Datasheet (PDF)

 ..1. Size:1510K  infineon
bfp740f.pdf

BFP740F BFP740F

BFP740FLow Noise Silicon Germanium Bipolar RF TransistorData SheetRevision 2.0, 2015-03-12RF & Protection DevicesEdition 2015-03-12Published byInfineon Technologies AG81726 Munich, Germany 2015 Infineon Technologies AGAll Rights Reserved.Legal DisclaimerThe information given in this document shall in no event be regarded as a guarantee of conditions or characteristi

 0.1. Size:627K  infineon
bfp740fesd.pdf

BFP740F BFP740F

BFP740FESDSiGe:C NPN RF bipolar transistorProduct descriptionThe BFP740FESD is a wideband NPN RF heterojunction bipolar transistor (HBT) with anintegrated ESD protection.Feature list Unique combination of high end RF performance and robustness:21 dBm maximum RF input power, 2 kV ESD robustness (HBM) due to integrated protection circuits NFmin = 0.6 dB at 2.4 GHz and 0.8 dB

 8.1. Size:519K  infineon
bfp740esd.pdf

BFP740F BFP740F

BFP740ESDSiGe:C NPN RF bipolar transistorProduct descriptionThe BFP740ESD is a wideband NPN RF heterojunction bipolar transistor (HBT) with anintegrated ESD protection.Feature list Unique combination of high end RF performance and robustness:21 dBm maximum RF input power, 2 kV ESD robustness (HBM) due to integrated protection circuits NFmin = 0.65 dB at 2.4 GHz and 0.9 dB

 8.2. Size:658K  infineon
bfp740.pdf

BFP740F BFP740F

BFP740SiGe:C NPN RF bipolar transistorProduct descriptionThe BFP740 is a wideband NPN RF heterojunction bipolar transistor (HBT).Feature list Low noise figure NFmin = 0.85 dB at 5.5 GHz, 3 V, 6 mA High gain Gms = 19.5 dB at 5.5 GHz, 3 V, 15 mA OIP3 = 24.5 dBm at 5.5 GHz, 3 V, 15 mAProduct validationQualified for industrial applications according to the relevant tests

 8.3. Size:1761K  kexin
bfp740.pdf

BFP740F BFP740F

SMD Type TransistorsNPN TransistorsBFP740 (KFP740)Uint: mmSOT-3430.9 0.10.22 Features 0.1 MAX.1.30.1 High gain ultra low noise RF transistorA4 3 High maximum stable gain Gold metallization for extra high reliability0.15 150 GHz fT-Silicon Germanium technology1 2+0.1 +0.1 Outstanding noise figure F = 0.5 dB at 1.8 GHz0.30.15

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