BFP740F Datasheet. Specs and Replacement

Type Designator: BFP740F  📄📄 

SMD Transistor Code: R7*

Material of Transistor: SiGe

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.16 W

Maximum Collector-Base Voltage |Vcb|: 13 V

Maximum Collector-Emitter Voltage |Vce|: 4 V

Maximum Emitter-Base Voltage |Veb|: 1.2 V

Maximum Collector Current |Ic max|: 0.045 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 45000 MHz

Collector Capacitance (Cc): 0.08 pF

Forward Current Transfer Ratio (hFE), MIN: 160

Noise Figure, dB: -

Package: TSFP4-1

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BFP740F datasheet

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BFP740F

BFP740F Low Noise Silicon Germanium Bipolar RF Transistor Data Sheet Revision 2.0, 2015-03-12 RF & Protection Devices Edition 2015-03-12 Published by Infineon Technologies AG 81726 Munich, Germany 2015 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristi... See More ⇒

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BFP740F

BFP740FESD SiGe C NPN RF bipolar transistor Product description The BFP740FESD is a wideband NPN RF heterojunction bipolar transistor (HBT) with an integrated ESD protection. Feature list Unique combination of high end RF performance and robustness 21 dBm maximum RF input power, 2 kV ESD robustness (HBM) due to integrated protection circuits NFmin = 0.6 dB at 2.4 GHz and 0.8 dB... See More ⇒

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BFP740F

BFP740 SiGe C NPN RF bipolar transistor Product description The BFP740 is a wideband NPN RF heterojunction bipolar transistor (HBT). Feature list Low noise figure NFmin = 0.85 dB at 5.5 GHz, 3 V, 6 mA High gain Gms = 19.5 dB at 5.5 GHz, 3 V, 15 mA OIP3 = 24.5 dBm at 5.5 GHz, 3 V, 15 mA Product validation Qualified for industrial applications according to the relevant tests ... See More ⇒

 8.2. Size:519K  infineon

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BFP740F

BFP740ESD SiGe C NPN RF bipolar transistor Product description The BFP740ESD is a wideband NPN RF heterojunction bipolar transistor (HBT) with an integrated ESD protection. Feature list Unique combination of high end RF performance and robustness 21 dBm maximum RF input power, 2 kV ESD robustness (HBM) due to integrated protection circuits NFmin = 0.65 dB at 2.4 GHz and 0.9 dB ... See More ⇒

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Detailed specifications: BFP640ESD, BFP650, BFP650F, BFP720, BFP720ESD, BFP720F, BFP720FESD, BFP740ESD, 2SD313, BFP740FESD, BFP760, BFP780, BFP840ESD, BFP840FESD, BFP842ESD, BFP843, BFP843F

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