All Transistors. BFP740F Datasheet

 

BFP740F Datasheet and Replacement


   Type Designator: BFP740F
   SMD Transistor Code: R7*
   Material of Transistor: SiGe
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.16 W
   Maximum Collector-Base Voltage |Vcb|: 13 V
   Maximum Collector-Emitter Voltage |Vce|: 4 V
   Maximum Emitter-Base Voltage |Veb|: 1.2 V
   Maximum Collector Current |Ic max|: 0.045 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 45000 MHz
   Collector Capacitance (Cc): 0.08 pF
   Forward Current Transfer Ratio (hFE), MIN: 160
   Noise Figure, dB: -
   Package: TSFP4-1
 

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BFP740F Datasheet (PDF)

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BFP740F

BFP740FLow Noise Silicon Germanium Bipolar RF TransistorData SheetRevision 2.0, 2015-03-12RF & Protection DevicesEdition 2015-03-12Published byInfineon Technologies AG81726 Munich, Germany 2015 Infineon Technologies AGAll Rights Reserved.Legal DisclaimerThe information given in this document shall in no event be regarded as a guarantee of conditions or characteristi

 0.1. Size:627K  infineon
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BFP740F

BFP740FESDSiGe:C NPN RF bipolar transistorProduct descriptionThe BFP740FESD is a wideband NPN RF heterojunction bipolar transistor (HBT) with anintegrated ESD protection.Feature list Unique combination of high end RF performance and robustness:21 dBm maximum RF input power, 2 kV ESD robustness (HBM) due to integrated protection circuits NFmin = 0.6 dB at 2.4 GHz and 0.8 dB

 8.1. Size:658K  infineon
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BFP740F

BFP740SiGe:C NPN RF bipolar transistorProduct descriptionThe BFP740 is a wideband NPN RF heterojunction bipolar transistor (HBT).Feature list Low noise figure NFmin = 0.85 dB at 5.5 GHz, 3 V, 6 mA High gain Gms = 19.5 dB at 5.5 GHz, 3 V, 15 mA OIP3 = 24.5 dBm at 5.5 GHz, 3 V, 15 mAProduct validationQualified for industrial applications according to the relevant tests

 8.2. Size:519K  infineon
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BFP740F

BFP740ESDSiGe:C NPN RF bipolar transistorProduct descriptionThe BFP740ESD is a wideband NPN RF heterojunction bipolar transistor (HBT) with anintegrated ESD protection.Feature list Unique combination of high end RF performance and robustness:21 dBm maximum RF input power, 2 kV ESD robustness (HBM) due to integrated protection circuits NFmin = 0.65 dB at 2.4 GHz and 0.9 dB

Datasheet: BFP640ESD , BFP650 , BFP650F , BFP720 , BFP720ESD , BFP720F , BFP720FESD , BFP740ESD , BC558 , BFP740FESD , BFP760 , BFP780 , BFP840ESD , BFP840FESD , BFP842ESD , BFP843 , BFP843F .

History: GT810A

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