BFP840ESD . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BFP840ESD
Código: T8*
Material: SiGe
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.075 W
Tensión colector-base (Vcb): 2.9 V
Tensión colector-emisor (Vce): 2.25 V
Corriente del colector DC máxima (Ic): 0.035 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 80000 MHz
Capacitancia de salida (Cc): 0.037 pF
Ganancia de corriente contínua (hfe): 150
Paquete / Cubierta: SOT343
Búsqueda de reemplazo de BFP840ESD
BFP840ESD Datasheet (PDF)
bfp840esd.pdf

BFP840ESDSiGe:C NPN RF bipolar transistorProduct descriptionThe BFP840ESD is a discrete RF heterojunction bipolar transistor (HBT) with anintegrated ESD protection suitable for 5 GHz band applications.Feature list Unique combination of high end RF performance and robustness: 20 dBm maximum RF input power,1.5 kV HBM ESD hardness High transition frequency fT = 80 GHz to enab
bfp840fesd.pdf

BFP840FESDSiGe:C NPN RF bipolar transistorProduct descriptionThe BFP840FESD is a discrete RF heterojunction bipolar transistor (HBT) with anintegrated ESD protection suitable for 5 GHz band applications.Feature list Unique combination of high end RF performance and robustness: 20 dBm maximum RF input power,1.5 kV HBM ESD hardness High transition frequency fT = 85 GHz to en
bfp842esd.pdf

BFP842ESDSiGe:C NPN RF bipolar transistorProduct descriptionThe BFP842ESD is a high performance RF heterojunction bipolar transistor (HBT) with anintegrated ESD protection suitable for 2.3 - 3.5 GHz LNA applications.Feature list Unique combination of high end RF performance and robustness: 16 dBm maximum RF input power,1 kV HBM ESD hardness High transition frequency fT = 5
bfp843.pdf

BFP843Robust low noise broadband pre-matched RF bipolar transistorProduct descriptionThe BFP843 is a robust low noise broadband pre-matched RF heterojunction bipolartransistor (HBT).Feature list Unique combination of high end RF performance and robustness: 20 dBm maximum RF input power,1.5 kV HBM ESD hardness High transition frequency enables best in class noise performanc
Otros transistores... BFP720ESD , BFP720F , BFP720FESD , BFP740ESD , BFP740F , BFP740FESD , BFP760 , BFP780 , D209L , BFP840FESD , BFP842ESD , BFP843 , BFP843F , BFQ790 , BFR193F , BFR193L3 , BFR193W .



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