BFP840ESD . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BFP840ESD

Código: T8*

Material: SiGe

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.075 W

Tensión colector-base (Vcb): 2.9 V

Tensión colector-emisor (Vce): 2.25 V

Corriente del colector DC máxima (Ic): 0.035 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Producto de corriente -- ganancia — ancho de banda (ft): 80000 MHz

Capacitancia de salida (Cc): 0.037 pF

Ganancia de corriente contínua (hfe): 150

Empaquetado / Estuche: SOT343

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BFP840ESD Datasheet (PDF)

..1. bfp840esd.pdf Size:554K _infineon

BFP840ESDSiGe:C NPN RF bipolar transistorProduct descriptionThe BFP840ESD is a discrete RF heterojunction bipolar transistor (HBT) with anintegrated ESD protection suitable for 5 GHz band applications.Feature list Unique combination of high end RF performance and robustness: 20 dBm maximum RF input power,1.5 kV HBM ESD hardness High transition frequency fT = 80 GHz to enab

8.1. bfp840fesd.pdf Size:464K _infineon

BFP840FESDSiGe:C NPN RF bipolar transistorProduct descriptionThe BFP840FESD is a discrete RF heterojunction bipolar transistor (HBT) with anintegrated ESD protection suitable for 5 GHz band applications.Feature list Unique combination of high end RF performance and robustness: 20 dBm maximum RF input power,1.5 kV HBM ESD hardness High transition frequency fT = 85 GHz to en

9.1. bfp843.pdf Size:528K _infineon

BFP843Robust low noise broadband pre-matched RF bipolar transistorProduct descriptionThe BFP843 is a robust low noise broadband pre-matched RF heterojunction bipolartransistor (HBT).Feature list Unique combination of high end RF performance and robustness: 20 dBm maximum RF input power,1.5 kV HBM ESD hardness High transition frequency enables best in class noise performanc

9.2. bfp842esd.pdf Size:526K _infineon

BFP842ESDSiGe:C NPN RF bipolar transistorProduct descriptionThe BFP842ESD is a high performance RF heterojunction bipolar transistor (HBT) with anintegrated ESD protection suitable for 2.3 - 3.5 GHz LNA applications.Feature list Unique combination of high end RF performance and robustness: 16 dBm maximum RF input power,1 kV HBM ESD hardness High transition frequency fT = 5

9.3. bfp843f.pdf Size:455K _infineon

BFP843FSiGe:C NPN RF bipolar transistorProduct descriptionThe BFP843F is a robust low noise broadband pre-matched RF heterojunction bipolartransistor (HBT).Feature list Unique combination of high end RF performance and robustness: 20 dBm maximum RF input power,1.5 kV HBM ESD hardness High transition frequency to enable best in class noise performance at high frequencies:

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , TIP31 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

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