BFP840ESD Datasheet. Specs and Replacement

Type Designator: BFP840ESD  📄📄 

SMD Transistor Code: T8*

Material of Transistor: SiGe

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.075 W

Maximum Collector-Base Voltage |Vcb|: 2.9 V

Maximum Collector-Emitter Voltage |Vce|: 2.25 V

Maximum Collector Current |Ic max|: 0.035 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 80000 MHz

Collector Capacitance (Cc): 0.037 pF

Forward Current Transfer Ratio (hFE), MIN: 150

Noise Figure, dB: -

Package: SOT343

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BFP840ESD datasheet

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BFP840ESD

BFP840ESD SiGe C NPN RF bipolar transistor Product description The BFP840ESD is a discrete RF heterojunction bipolar transistor (HBT) with an integrated ESD protection suitable for 5 GHz band applications. Feature list Unique combination of high end RF performance and robustness 20 dBm maximum RF input power, 1.5 kV HBM ESD hardness High transition frequency fT = 80 GHz to enab... See More ⇒

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BFP840ESD

BFP840FESD SiGe C NPN RF bipolar transistor Product description The BFP840FESD is a discrete RF heterojunction bipolar transistor (HBT) with an integrated ESD protection suitable for 5 GHz band applications. Feature list Unique combination of high end RF performance and robustness 20 dBm maximum RF input power, 1.5 kV HBM ESD hardness High transition frequency fT = 85 GHz to en... See More ⇒

 9.1. Size:526K  infineon

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BFP840ESD

BFP842ESD SiGe C NPN RF bipolar transistor Product description The BFP842ESD is a high performance RF heterojunction bipolar transistor (HBT) with an integrated ESD protection suitable for 2.3 - 3.5 GHz LNA applications. Feature list Unique combination of high end RF performance and robustness 16 dBm maximum RF input power, 1 kV HBM ESD hardness High transition frequency fT = 5... See More ⇒

 9.2. Size:528K  infineon

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BFP840ESD

BFP843 Robust low noise broadband pre-matched RF bipolar transistor Product description The BFP843 is a robust low noise broadband pre-matched RF heterojunction bipolar transistor (HBT). Feature list Unique combination of high end RF performance and robustness 20 dBm maximum RF input power, 1.5 kV HBM ESD hardness High transition frequency enables best in class noise performanc... See More ⇒

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Detailed specifications: BFP720ESD, BFP720F, BFP720FESD, BFP740ESD, BFP740F, BFP740FESD, BFP760, BFP780, S8550, BFP840FESD, BFP842ESD, BFP843, BFP843F, BFQ790, BFR193F, BFR193L3, BFR193W

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