BFP840ESD Datasheet, Equivalent, Cross Reference Search
Type Designator: BFP840ESD
SMD Transistor Code: T8*
Material of Transistor: SiGe
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.075 W
Maximum Collector-Base Voltage |Vcb|: 2.9 V
Maximum Collector-Emitter Voltage |Vce|: 2.25 V
Maximum Collector Current |Ic max|: 0.035 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 80000 MHz
Collector Capacitance (Cc): 0.037 pF
Forward Current Transfer Ratio (hFE), MIN: 150
Noise Figure, dB: -
Package: SOT343
BFP840ESD Transistor Equivalent Substitute - Cross-Reference Search
BFP840ESD Datasheet (PDF)
bfp840esd.pdf
BFP840ESDSiGe:C NPN RF bipolar transistorProduct descriptionThe BFP840ESD is a discrete RF heterojunction bipolar transistor (HBT) with anintegrated ESD protection suitable for 5 GHz band applications.Feature list Unique combination of high end RF performance and robustness: 20 dBm maximum RF input power,1.5 kV HBM ESD hardness High transition frequency fT = 80 GHz to enab
bfp840fesd.pdf
BFP840FESDSiGe:C NPN RF bipolar transistorProduct descriptionThe BFP840FESD is a discrete RF heterojunction bipolar transistor (HBT) with anintegrated ESD protection suitable for 5 GHz band applications.Feature list Unique combination of high end RF performance and robustness: 20 dBm maximum RF input power,1.5 kV HBM ESD hardness High transition frequency fT = 85 GHz to en
bfp842esd.pdf
BFP842ESDSiGe:C NPN RF bipolar transistorProduct descriptionThe BFP842ESD is a high performance RF heterojunction bipolar transistor (HBT) with anintegrated ESD protection suitable for 2.3 - 3.5 GHz LNA applications.Feature list Unique combination of high end RF performance and robustness: 16 dBm maximum RF input power,1 kV HBM ESD hardness High transition frequency fT = 5
bfp843.pdf
BFP843Robust low noise broadband pre-matched RF bipolar transistorProduct descriptionThe BFP843 is a robust low noise broadband pre-matched RF heterojunction bipolartransistor (HBT).Feature list Unique combination of high end RF performance and robustness: 20 dBm maximum RF input power,1.5 kV HBM ESD hardness High transition frequency enables best in class noise performanc
bfp843f.pdf
BFP843FSiGe:C NPN RF bipolar transistorProduct descriptionThe BFP843F is a robust low noise broadband pre-matched RF heterojunction bipolartransistor (HBT).Feature list Unique combination of high end RF performance and robustness: 20 dBm maximum RF input power,1.5 kV HBM ESD hardness High transition frequency to enable best in class noise performance at high frequencies:
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
