BFP840FESD . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

BFP840FESD SiGe C NPN RF bipolar transistor Product description The BFP840FESD is a discrete RF heterojunction bipolar transistor (HBT) with an integrated ESD protection suitable for 5 GHz band applications. Feature list Unique combination of high end RF performance and robustness 20 dBm maximum RF input power, 1.5 kV HBM ESD hardness High transition frequency fT = 85 GHz to en

BFP840ESD SiGe C NPN RF bipolar transistor Product description The BFP840ESD is a discrete RF heterojunction bipolar transistor (HBT) with an integrated ESD protection suitable for 5 GHz band applications. Feature list Unique combination of high end RF performance and robustness 20 dBm maximum RF input power, 1.5 kV HBM ESD hardness High transition frequency fT = 80 GHz to enab

BFP842ESD SiGe C NPN RF bipolar transistor Product description The BFP842ESD is a high performance RF heterojunction bipolar transistor (HBT) with an integrated ESD protection suitable for 2.3 - 3.5 GHz LNA applications. Feature list Unique combination of high end RF performance and robustness 16 dBm maximum RF input power, 1 kV HBM ESD hardness High transition frequency fT = 5

BFP843 Robust low noise broadband pre-matched RF bipolar transistor Product description The BFP843 is a robust low noise broadband pre-matched RF heterojunction bipolar transistor (HBT). Feature list Unique combination of high end RF performance and robustness 20 dBm maximum RF input power, 1.5 kV HBM ESD hardness High transition frequency enables best in class noise performanc

BFP843F SiGe C NPN RF bipolar transistor Product description The BFP843F is a robust low noise broadband pre-matched RF heterojunction bipolar transistor (HBT). Feature list Unique combination of high end RF performance and robustness 20 dBm maximum RF input power, 1.5 kV HBM ESD hardness High transition frequency to enable best in class noise performance at high frequencies