BFP843F Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BFP843F

Código: T2*

Material: SiGe

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.125 W

Tensión colector-base (Vcb): 2.9 V

Tensión colector-emisor (Vce): 2.25 V

Corriente del colector DC máxima (Ic): 0.055 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Capacitancia de salida (Cc): 0.06 pF

Ganancia de corriente contínua (hFE): 150

Encapsulados: TSFP4-1

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BFP843F datasheet

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BFP843F

BFP843F SiGe C NPN RF bipolar transistor Product description The BFP843F is a robust low noise broadband pre-matched RF heterojunction bipolar transistor (HBT). Feature list Unique combination of high end RF performance and robustness 20 dBm maximum RF input power, 1.5 kV HBM ESD hardness High transition frequency to enable best in class noise performance at high frequencies

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BFP843F

BFP843 Robust low noise broadband pre-matched RF bipolar transistor Product description The BFP843 is a robust low noise broadband pre-matched RF heterojunction bipolar transistor (HBT). Feature list Unique combination of high end RF performance and robustness 20 dBm maximum RF input power, 1.5 kV HBM ESD hardness High transition frequency enables best in class noise performanc

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BFP843F

BFP842ESD SiGe C NPN RF bipolar transistor Product description The BFP842ESD is a high performance RF heterojunction bipolar transistor (HBT) with an integrated ESD protection suitable for 2.3 - 3.5 GHz LNA applications. Feature list Unique combination of high end RF performance and robustness 16 dBm maximum RF input power, 1 kV HBM ESD hardness High transition frequency fT = 5

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BFP843F

BFP840ESD SiGe C NPN RF bipolar transistor Product description The BFP840ESD is a discrete RF heterojunction bipolar transistor (HBT) with an integrated ESD protection suitable for 5 GHz band applications. Feature list Unique combination of high end RF performance and robustness 20 dBm maximum RF input power, 1.5 kV HBM ESD hardness High transition frequency fT = 80 GHz to enab

MOSTRAR MÁS

Otros transistores... BFP740F, BFP740FESD, BFP760, BFP780, BFP840ESD, BFP840FESD, BFP842ESD, BFP843, 2SC945, BFQ790, BFR193F, BFR193L3, BFR193W, BFR360L3, BFR380F, BFR740EL3, BFR740L3RH