All Transistors. BFP843F Datasheet

 

BFP843F Datasheet and Replacement


   Type Designator: BFP843F
   SMD Transistor Code: T2*
   Material of Transistor: SiGe
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.125 W
   Maximum Collector-Base Voltage |Vcb|: 2.9 V
   Maximum Collector-Emitter Voltage |Vce|: 2.25 V
   Maximum Collector Current |Ic max|: 0.055 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Collector Capacitance (Cc): 0.06 pF
   Forward Current Transfer Ratio (hFE), MIN: 150
   Noise Figure, dB: -
   Package: TSFP4-1
 

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BFP843F Datasheet (PDF)

 ..1. Size:455K  infineon
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BFP843F

BFP843FSiGe:C NPN RF bipolar transistorProduct descriptionThe BFP843F is a robust low noise broadband pre-matched RF heterojunction bipolartransistor (HBT).Feature list Unique combination of high end RF performance and robustness: 20 dBm maximum RF input power,1.5 kV HBM ESD hardness High transition frequency to enable best in class noise performance at high frequencies:

 8.1. Size:528K  infineon
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BFP843F

BFP843Robust low noise broadband pre-matched RF bipolar transistorProduct descriptionThe BFP843 is a robust low noise broadband pre-matched RF heterojunction bipolartransistor (HBT).Feature list Unique combination of high end RF performance and robustness: 20 dBm maximum RF input power,1.5 kV HBM ESD hardness High transition frequency enables best in class noise performanc

 9.1. Size:526K  infineon
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BFP843F

BFP842ESDSiGe:C NPN RF bipolar transistorProduct descriptionThe BFP842ESD is a high performance RF heterojunction bipolar transistor (HBT) with anintegrated ESD protection suitable for 2.3 - 3.5 GHz LNA applications.Feature list Unique combination of high end RF performance and robustness: 16 dBm maximum RF input power,1 kV HBM ESD hardness High transition frequency fT = 5

 9.2. Size:554K  infineon
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BFP843F

BFP840ESDSiGe:C NPN RF bipolar transistorProduct descriptionThe BFP840ESD is a discrete RF heterojunction bipolar transistor (HBT) with anintegrated ESD protection suitable for 5 GHz band applications.Feature list Unique combination of high end RF performance and robustness: 20 dBm maximum RF input power,1.5 kV HBM ESD hardness High transition frequency fT = 80 GHz to enab

Datasheet: BFP740F , BFP740FESD , BFP760 , BFP780 , BFP840ESD , BFP840FESD , BFP842ESD , BFP843 , 2SC2655 , BFQ790 , BFR193F , BFR193L3 , BFR193W , BFR360L3 , BFR380F , BFR740EL3 , BFR740L3RH .

History: MMBT2218A | 2SD857

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