BFP843F Datasheet. Specs and Replacement

Type Designator: BFP843F  📄📄 

SMD Transistor Code: T2*

Material of Transistor: SiGe

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.125 W

Maximum Collector-Base Voltage |Vcb|: 2.9 V

Maximum Collector-Emitter Voltage |Vce|: 2.25 V

Maximum Collector Current |Ic max|: 0.055 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Collector Capacitance (Cc): 0.06 pF

Forward Current Transfer Ratio (hFE), MIN: 150

Noise Figure, dB: -

Package: TSFP4-1

  📄📄 Copy 

 BFP843F Substitution

- BJT ⓘ Cross-Reference Search

 

BFP843F datasheet

 ..1. Size:455K  infineon

 bfp843f.pdf pdf_icon

BFP843F

BFP843F SiGe C NPN RF bipolar transistor Product description The BFP843F is a robust low noise broadband pre-matched RF heterojunction bipolar transistor (HBT). Feature list Unique combination of high end RF performance and robustness 20 dBm maximum RF input power, 1.5 kV HBM ESD hardness High transition frequency to enable best in class noise performance at high frequencies ... See More ⇒

 8.1. Size:528K  infineon

 bfp843.pdf pdf_icon

BFP843F

BFP843 Robust low noise broadband pre-matched RF bipolar transistor Product description The BFP843 is a robust low noise broadband pre-matched RF heterojunction bipolar transistor (HBT). Feature list Unique combination of high end RF performance and robustness 20 dBm maximum RF input power, 1.5 kV HBM ESD hardness High transition frequency enables best in class noise performanc... See More ⇒

 9.1. Size:526K  infineon

 bfp842esd.pdf pdf_icon

BFP843F

BFP842ESD SiGe C NPN RF bipolar transistor Product description The BFP842ESD is a high performance RF heterojunction bipolar transistor (HBT) with an integrated ESD protection suitable for 2.3 - 3.5 GHz LNA applications. Feature list Unique combination of high end RF performance and robustness 16 dBm maximum RF input power, 1 kV HBM ESD hardness High transition frequency fT = 5... See More ⇒

 9.2. Size:554K  infineon

 bfp840esd.pdf pdf_icon

BFP843F

BFP840ESD SiGe C NPN RF bipolar transistor Product description The BFP840ESD is a discrete RF heterojunction bipolar transistor (HBT) with an integrated ESD protection suitable for 5 GHz band applications. Feature list Unique combination of high end RF performance and robustness 20 dBm maximum RF input power, 1.5 kV HBM ESD hardness High transition frequency fT = 80 GHz to enab... See More ⇒

SHOW MORE

Detailed specifications: BFP740F, BFP740FESD, BFP760, BFP780, BFP840ESD, BFP840FESD, BFP842ESD, BFP843, B772, BFQ790, BFR193F, BFR193L3, BFR193W, BFR360L3, BFR380F, BFR740EL3, BFR740L3RH

Keywords - BFP843F pdf specs

 BFP843F cross reference

 BFP843F equivalent finder

 BFP843F pdf lookup

 BFP843F substitution

 BFP843F replacement