BFR193L3 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BFR193L3  📄📄 

Código: RC

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.58 W

Tensión colector-base (Vcb): 20 V

Tensión colector-emisor (Vce): 12 V

Tensión emisor-base (Veb): 2 V

Corriente del colector DC máxima (Ic): 0.08 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 6000 MHz

Capacitancia de salida (Cc): 0.63 pF

Ganancia de corriente contínua (hFE): 70

Encapsulados: TSLP3-1

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BFR193L3 datasheet

 ..1. Size:495K  infineon
 bfr193l3.pdf pdf_icon

BFR193L3

BFR193L3 NPN Bipolar RF Transistor For low noise, high-gain amplifiers up to 2 GHz 3 For linear broadband amplifiers 1 fT = 8 GHz, NFmin = 1 dB at 900 MHz 2 Pb-free (RoHS compliant) package Qualification report according to AEC-Q101 available ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type Marking Pin Configuration Package BFR193L

 8.1. Size:56K  siemens
 bfr193w.pdf pdf_icon

BFR193L3

BFR 193W NPN Silicon RF Transistor For low noise, high-gain amplifiers up to 2GHz For linear broadband amplifiers fT = 8GHz F = 1.3dB at 900MHz ESD Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration Package BFR 193W RCs Q62702-F1510 1 = B 2 = E 3 = C SOT-323 Maximum Ratings Parameter Symbol Values Unit Col

 8.2. Size:56K  siemens
 bfr193.pdf pdf_icon

BFR193L3

BFR 193 NPN Silicon RF Transistor For low noise, high-gain amplifiers up to 2GHz For linear broadband amplifiers fT = 8GHz F = 1.3dB at 900MHz ESD Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration Package BFR 193 RCs Q62702-F1218 1 = B 2 = E 3 = C SOT-23 Maximum Ratings Parameter Symbol Values Unit Collec

 8.3. Size:536K  infineon
 bfr193f.pdf pdf_icon

BFR193L3

BFR193F Low Noise Silicon Bipolar RF Transistor For low noise, high-gain amplifiers up to 2 GHz 2 3 For linear broadband amplifiers 1 fT = 8 GHz, NFmin = 1 dB at 900 MHz Pb-free (RoHS compliant) and halogen-free product Qualification report according to AEC-Q101 available ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type Marking Pin

MOSTRAR MÁS

Otros transistores... BFP780, BFP840ESD, BFP840FESD, BFP842ESD, BFP843, BFP843F, BFQ790, BFR193F, 2SC2240, BFR193W, BFR360L3, BFR380F, BFR740EL3, BFR740L3RH, BFR840L3RHESD, BFR843EL3, SMBT3906L3