BFR193L3 Datasheet. Specs and Replacement

Type Designator: BFR193L3  📄📄 

SMD Transistor Code: RC

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.58 W

Maximum Collector-Base Voltage |Vcb|: 20 V

Maximum Collector-Emitter Voltage |Vce|: 12 V

Maximum Emitter-Base Voltage |Veb|: 2 V

Maximum Collector Current |Ic max|: 0.08 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 6000 MHz

Collector Capacitance (Cc): 0.63 pF

Forward Current Transfer Ratio (hFE), MIN: 70

Noise Figure, dB: -

Package: TSLP3-1

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BFR193L3 datasheet

 ..1. Size:495K  infineon

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BFR193L3

BFR193L3 NPN Bipolar RF Transistor For low noise, high-gain amplifiers up to 2 GHz 3 For linear broadband amplifiers 1 fT = 8 GHz, NFmin = 1 dB at 900 MHz 2 Pb-free (RoHS compliant) package Qualification report according to AEC-Q101 available ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type Marking Pin Configuration Package BFR193L... See More ⇒

 8.1. Size:56K  siemens

bfr193w.pdf pdf_icon

BFR193L3

BFR 193W NPN Silicon RF Transistor For low noise, high-gain amplifiers up to 2GHz For linear broadband amplifiers fT = 8GHz F = 1.3dB at 900MHz ESD Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration Package BFR 193W RCs Q62702-F1510 1 = B 2 = E 3 = C SOT-323 Maximum Ratings Parameter Symbol Values Unit Col... See More ⇒

 8.2. Size:56K  siemens

bfr193.pdf pdf_icon

BFR193L3

BFR 193 NPN Silicon RF Transistor For low noise, high-gain amplifiers up to 2GHz For linear broadband amplifiers fT = 8GHz F = 1.3dB at 900MHz ESD Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration Package BFR 193 RCs Q62702-F1218 1 = B 2 = E 3 = C SOT-23 Maximum Ratings Parameter Symbol Values Unit Collec... See More ⇒

 8.3. Size:536K  infineon

bfr193f.pdf pdf_icon

BFR193L3

BFR193F Low Noise Silicon Bipolar RF Transistor For low noise, high-gain amplifiers up to 2 GHz 2 3 For linear broadband amplifiers 1 fT = 8 GHz, NFmin = 1 dB at 900 MHz Pb-free (RoHS compliant) and halogen-free product Qualification report according to AEC-Q101 available ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type Marking Pin... See More ⇒

Detailed specifications: BFP780, BFP840ESD, BFP840FESD, BFP842ESD, BFP843, BFP843F, BFQ790, BFR193F, S9013, BFR193W, BFR360L3, BFR380F, BFR740EL3, BFR740L3RH, BFR840L3RHESD, BFR843EL3, SMBT3906L3

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