BFR193W . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BFR193W
Código: RC*
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.58 W
Tensión colector-base (Vcb): 20 V
Tensión colector-emisor (Vce): 12 V
Tensión emisor-base (Veb): 2 V
Corriente del colector DC máxima (Ic): 0.08 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 6000 MHz
Capacitancia de salida (Cc): 0.74 pF
Ganancia de corriente contínua (hfe): 70
Paquete / Cubierta: SOT323
Búsqueda de reemplazo de transistor bipolar BFR193W
BFR193W Datasheet (PDF)
bfr193w.pdf
BFR 193WNPN Silicon RF Transistor For low noise, high-gain amplifiers up to 2GHz For linear broadband amplifiers fT = 8GHz F = 1.3dB at 900MHzESD: Electrostatic discharge sensitive device, observe handling precaution!Type Marking Ordering Code Pin Configuration PackageBFR 193W RCs Q62702-F1510 1 = B 2 = E 3 = C SOT-323Maximum RatingsParameter Symbol Values UnitCol
bfr193w.pdf
BFR193WLow Noise Silicon Bipolar RF Transistor For low noise, high-gain amplifiers up to 2 GHz For linear broadband amplifiers3 21 fT = 8 GHz, NFmin = 1 dB at 900 MHz Pb-free (RoHS compliant) package Qualification report according to AEC-Q101 availableESD (Electrostatic discharge) sensitive device, observe handling precaution!Type Marking Pin Configuration Pac
bfr193.pdf
BFR 193NPN Silicon RF Transistor For low noise, high-gain amplifiers up to 2GHz For linear broadband amplifiers fT = 8GHz F = 1.3dB at 900MHzESD: Electrostatic discharge sensitive device, observe handling precaution!Type Marking Ordering Code Pin Configuration PackageBFR 193 RCs Q62702-F1218 1 = B 2 = E 3 = C SOT-23Maximum RatingsParameter Symbol Values UnitCollec
bfr193l3.pdf
BFR193L3NPN Bipolar RF Transistor For low noise, high-gain amplifiers up to 2 GHz3 For linear broadband amplifiers1 fT = 8 GHz, NFmin = 1 dB at 900 MHz 2 Pb-free (RoHS compliant) package Qualification report according to AEC-Q101 availableESD (Electrostatic discharge) sensitive device, observe handling precaution!Type Marking Pin Configuration PackageBFR193L
bfr193.pdf
BFR193Low Noise Silicon Bipolar RF Transistor For low noise, high-gain amplifiers up to 2 GHz For linear broadband amplifiers fT = 8 GHz, NFmin = 1 dB at 900 MHz Pb-free (RoHS compliant) package Qualification report according to AEC-Q101 availableESD (Electrostatic discharge) sensitive device, observe handling precaution!Type Marking Pin Configuration PackageBFR
bfr193f.pdf
BFR193FLow Noise Silicon Bipolar RF Transistor For low noise, high-gain amplifiers up to 2 GHz23 For linear broadband amplifiers1 fT = 8 GHz, NFmin = 1 dB at 900 MHz Pb-free (RoHS compliant) and halogen-free product Qualification report according to AEC-Q101 availableESD (Electrostatic discharge) sensitive device, observe handling precaution!Type Marking Pin
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