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BFR193W . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BFR193W
   Código: RC*
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.58 W
   Tensión colector-base (Vcb): 20 V
   Tensión colector-emisor (Vce): 12 V
   Tensión emisor-base (Veb): 2 V
   Corriente del colector DC máxima (Ic): 0.08 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 6000 MHz
   Capacitancia de salida (Cc): 0.74 pF
   Ganancia de corriente contínua (hfe): 70
   Paquete / Cubierta: SOT323
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BFR193W Datasheet (PDF)

 ..1. Size:56K  siemens
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BFR193W

BFR 193WNPN Silicon RF Transistor For low noise, high-gain amplifiers up to 2GHz For linear broadband amplifiers fT = 8GHz F = 1.3dB at 900MHzESD: Electrostatic discharge sensitive device, observe handling precaution!Type Marking Ordering Code Pin Configuration PackageBFR 193W RCs Q62702-F1510 1 = B 2 = E 3 = C SOT-323Maximum RatingsParameter Symbol Values UnitCol

 ..2. Size:655K  infineon
bfr193w.pdf pdf_icon

BFR193W

BFR193WLow Noise Silicon Bipolar RF Transistor For low noise, high-gain amplifiers up to 2 GHz For linear broadband amplifiers3 21 fT = 8 GHz, NFmin = 1 dB at 900 MHz Pb-free (RoHS compliant) package Qualification report according to AEC-Q101 availableESD (Electrostatic discharge) sensitive device, observe handling precaution!Type Marking Pin Configuration Pac

 8.1. Size:56K  siemens
bfr193.pdf pdf_icon

BFR193W

BFR 193NPN Silicon RF Transistor For low noise, high-gain amplifiers up to 2GHz For linear broadband amplifiers fT = 8GHz F = 1.3dB at 900MHzESD: Electrostatic discharge sensitive device, observe handling precaution!Type Marking Ordering Code Pin Configuration PackageBFR 193 RCs Q62702-F1218 1 = B 2 = E 3 = C SOT-23Maximum RatingsParameter Symbol Values UnitCollec

 8.2. Size:536K  infineon
bfr193f.pdf pdf_icon

BFR193W

BFR193FLow Noise Silicon Bipolar RF Transistor For low noise, high-gain amplifiers up to 2 GHz23 For linear broadband amplifiers1 fT = 8 GHz, NFmin = 1 dB at 900 MHz Pb-free (RoHS compliant) and halogen-free product Qualification report according to AEC-Q101 availableESD (Electrostatic discharge) sensitive device, observe handling precaution!Type Marking Pin

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: 2SD1667Q | D882S-E | DTA123JS3 | BU526A-8 | BC846CLT1G | PBLS2003D | FJP13007H2TU

 

 
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