All Transistors. BFR193W Datasheet

 

BFR193W Datasheet, Equivalent, Cross Reference Search


   Type Designator: BFR193W
   SMD Transistor Code: RC*
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.58 W
   Maximum Collector-Base Voltage |Vcb|: 20 V
   Maximum Collector-Emitter Voltage |Vce|: 12 V
   Maximum Emitter-Base Voltage |Veb|: 2 V
   Maximum Collector Current |Ic max|: 0.08 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 6000 MHz
   Collector Capacitance (Cc): 0.74 pF
   Forward Current Transfer Ratio (hFE), MIN: 70
   Noise Figure, dB: -
   Package: SOT323

 BFR193W Transistor Equivalent Substitute - Cross-Reference Search

   

BFR193W Datasheet (PDF)

 ..1. Size:56K  siemens
bfr193w.pdf

BFR193W
BFR193W

BFR 193WNPN Silicon RF Transistor For low noise, high-gain amplifiers up to 2GHz For linear broadband amplifiers fT = 8GHz F = 1.3dB at 900MHzESD: Electrostatic discharge sensitive device, observe handling precaution!Type Marking Ordering Code Pin Configuration PackageBFR 193W RCs Q62702-F1510 1 = B 2 = E 3 = C SOT-323Maximum RatingsParameter Symbol Values UnitCol

 ..2. Size:655K  infineon
bfr193w.pdf

BFR193W
BFR193W

BFR193WLow Noise Silicon Bipolar RF Transistor For low noise, high-gain amplifiers up to 2 GHz For linear broadband amplifiers3 21 fT = 8 GHz, NFmin = 1 dB at 900 MHz Pb-free (RoHS compliant) package Qualification report according to AEC-Q101 availableESD (Electrostatic discharge) sensitive device, observe handling precaution!Type Marking Pin Configuration Pac

 8.1. Size:56K  siemens
bfr193.pdf

BFR193W
BFR193W

BFR 193NPN Silicon RF Transistor For low noise, high-gain amplifiers up to 2GHz For linear broadband amplifiers fT = 8GHz F = 1.3dB at 900MHzESD: Electrostatic discharge sensitive device, observe handling precaution!Type Marking Ordering Code Pin Configuration PackageBFR 193 RCs Q62702-F1218 1 = B 2 = E 3 = C SOT-23Maximum RatingsParameter Symbol Values UnitCollec

 8.2. Size:495K  infineon
bfr193l3.pdf

BFR193W
BFR193W

BFR193L3NPN Bipolar RF Transistor For low noise, high-gain amplifiers up to 2 GHz3 For linear broadband amplifiers1 fT = 8 GHz, NFmin = 1 dB at 900 MHz 2 Pb-free (RoHS compliant) package Qualification report according to AEC-Q101 availableESD (Electrostatic discharge) sensitive device, observe handling precaution!Type Marking Pin Configuration PackageBFR193L

 8.3. Size:626K  infineon
bfr193.pdf

BFR193W
BFR193W

BFR193Low Noise Silicon Bipolar RF Transistor For low noise, high-gain amplifiers up to 2 GHz For linear broadband amplifiers fT = 8 GHz, NFmin = 1 dB at 900 MHz Pb-free (RoHS compliant) package Qualification report according to AEC-Q101 availableESD (Electrostatic discharge) sensitive device, observe handling precaution!Type Marking Pin Configuration PackageBFR

 8.4. Size:536K  infineon
bfr193f.pdf

BFR193W
BFR193W

BFR193FLow Noise Silicon Bipolar RF Transistor For low noise, high-gain amplifiers up to 2 GHz23 For linear broadband amplifiers1 fT = 8 GHz, NFmin = 1 dB at 900 MHz Pb-free (RoHS compliant) and halogen-free product Qualification report according to AEC-Q101 availableESD (Electrostatic discharge) sensitive device, observe handling precaution!Type Marking Pin

Datasheet: BC507FA , BC507FB , BC508 , BC508A , BC508B , BC508C , BC508F , BC508FA , 2N2222 , BC508FC , BC509 , BC509B , BC509C , BC509F , BC509FB , BC509FC , BC510 .

 

 
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