BFR840L3RHESD Todos los transistores

 ..1. Size:464K  infineon
 bfr840l3rhesd.pdf

BFR840L3RHESD SiGe C NPN RF bipolar transistor Product description The BFR840L3RHESD is a dicrete RF heterojunction bipolar transistor (HBT) with an integrated ESD protection suitable for 5 GHz band applications. Feature list Unique combination of high end RF performance and robustness 20 dBm maximum RF input power, 1.5 kV HBM ESD hardness High transition frequency fT = 75 GHz

 9.1. Size:539K  infineon
 bfr843el3.pdf

BFR843EL3 Low noise broadband pre-matched RF bipolar transistor Product description The BFR843EL3 is a low noise dual band pre-matched transistor in a low profile package for high speed and low power consumption applications. Feature list Unique combination of high end RF performance and robustness 20 dBm maximum RF input power and 1 kV HBM ESD hardness High transition frequenc