All Transistors. BFR840L3RHESD Datasheet

 

BFR840L3RHESD Datasheet, Equivalent, Cross Reference Search

Type Designator: BFR840L3RHESD

SMD Transistor Code: T8

Material of Transistor: SiGe

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 0.075 W

Maximum Collector-Base Voltage |Vcb|: 2.9 V

Maximum Collector-Emitter Voltage |Vce|: 2.25 V

Maximum Collector Current |Ic max|: 0.035 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 75000 MHz

Collector Capacitance (Cc): 0.052 pF

Forward Current Transfer Ratio (hFE), MIN: 150

Noise Figure, dB: -

Package: TSLP3-9

BFR840L3RHESD Transistor Equivalent Substitute - Cross-Reference Search

 

BFR840L3RHESD Datasheet (PDF)

..1. bfr840l3rhesd.pdf Size:464K _infineon

BFR840L3RHESD
BFR840L3RHESD

BFR840L3RHESDSiGe:C NPN RF bipolar transistorProduct descriptionThe BFR840L3RHESD is a dicrete RF heterojunction bipolar transistor (HBT) with anintegrated ESD protection suitable for 5 GHz band applications.Feature list Unique combination of high end RF performance and robustness: 20 dBm maximum RF input power,1.5 kV HBM ESD hardness High transition frequency fT = 75 GHz

9.1. bfr843el3.pdf Size:539K _infineon

BFR840L3RHESD
BFR840L3RHESD

BFR843EL3Low noise broadband pre-matched RF bipolar transistorProduct descriptionThe BFR843EL3 is a low noise dual band pre-matched transistor in a low profile packagefor high speed and low power consumption applications.Feature list Unique combination of high end RF performance and robustness: 20 dBm maximum RF input power and1 kV HBM ESD hardness High transition frequenc

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , TIP31 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
Back to Top