All Transistors. BFR840L3RHESD Datasheet

 

BFR840L3RHESD Datasheet and Replacement


   Type Designator: BFR840L3RHESD
   SMD Transistor Code: T8
   Material of Transistor: SiGe
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.075 W
   Maximum Collector-Base Voltage |Vcb|: 2.9 V
   Maximum Collector-Emitter Voltage |Vce|: 2.25 V
   Maximum Collector Current |Ic max|: 0.035 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 75000 MHz
   Collector Capacitance (Cc): 0.052 pF
   Forward Current Transfer Ratio (hFE), MIN: 150
   Noise Figure, dB: -
   Package: TSLP3-9
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BFR840L3RHESD Datasheet (PDF)

 ..1. Size:464K  infineon
 bfr840l3rhesd.pdf pdf_icon

BFR840L3RHESD

BFR840L3RHESDSiGe:C NPN RF bipolar transistorProduct descriptionThe BFR840L3RHESD is a dicrete RF heterojunction bipolar transistor (HBT) with anintegrated ESD protection suitable for 5 GHz band applications.Feature list Unique combination of high end RF performance and robustness: 20 dBm maximum RF input power,1.5 kV HBM ESD hardness High transition frequency fT = 75 GHz

 9.1. Size:539K  infineon
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BFR840L3RHESD

BFR843EL3Low noise broadband pre-matched RF bipolar transistorProduct descriptionThe BFR843EL3 is a low noise dual band pre-matched transistor in a low profile packagefor high speed and low power consumption applications.Feature list Unique combination of high end RF performance and robustness: 20 dBm maximum RF input power and1 kV HBM ESD hardness High transition frequenc

Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , MJE340 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

History: 2SB1132-Q | 104T2 | LBC859BLT1G | D38S2 | MMBT5551Q | 3CA150D | 2SD189

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