BFR840L3RHESD Datasheet, Equivalent, Cross Reference Search
Type Designator: BFR840L3RHESD
SMD Transistor Code: T8
Material of Transistor: SiGe
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.075 W
Maximum Collector-Base Voltage |Vcb|: 2.9 V
Maximum Collector-Emitter Voltage |Vce|: 2.25 V
Maximum Collector Current |Ic max|: 0.035 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 75000 MHz
Collector Capacitance (Cc): 0.052 pF
Forward Current Transfer Ratio (hFE), MIN: 150
Noise Figure, dB: -
Package: TSLP3-9
BFR840L3RHESD Transistor Equivalent Substitute - Cross-Reference Search
BFR840L3RHESD Datasheet (PDF)
bfr840l3rhesd.pdf
BFR840L3RHESDSiGe:C NPN RF bipolar transistorProduct descriptionThe BFR840L3RHESD is a dicrete RF heterojunction bipolar transistor (HBT) with anintegrated ESD protection suitable for 5 GHz band applications.Feature list Unique combination of high end RF performance and robustness: 20 dBm maximum RF input power,1.5 kV HBM ESD hardness High transition frequency fT = 75 GHz
bfr843el3.pdf
BFR843EL3Low noise broadband pre-matched RF bipolar transistorProduct descriptionThe BFR843EL3 is a low noise dual band pre-matched transistor in a low profile packagefor high speed and low power consumption applications.Feature list Unique combination of high end RF performance and robustness: 20 dBm maximum RF input power and1 kV HBM ESD hardness High transition frequenc
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
