BFR843EL3 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BFR843EL3
Código: T2
Material: SiGe
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.125 W
Tensión colector-base (Vcb): 2.9 V
Tensión colector-emisor (Vce): 2.25 V
Corriente del colector DC máxima (Ic): 0.055 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Capacitancia de salida (Cc): 0.07 pF
Ganancia de corriente contínua (hfe): 230
Paquete / Cubierta: TSLP3-10
BFR843EL3 Datasheet (PDF)
bfr843el3.pdf

BFR843EL3Low noise broadband pre-matched RF bipolar transistorProduct descriptionThe BFR843EL3 is a low noise dual band pre-matched transistor in a low profile packagefor high speed and low power consumption applications.Feature list Unique combination of high end RF performance and robustness: 20 dBm maximum RF input power and1 kV HBM ESD hardness High transition frequenc
bfr840l3rhesd.pdf

BFR840L3RHESDSiGe:C NPN RF bipolar transistorProduct descriptionThe BFR840L3RHESD is a dicrete RF heterojunction bipolar transistor (HBT) with anintegrated ESD protection suitable for 5 GHz band applications.Feature list Unique combination of high end RF performance and robustness: 20 dBm maximum RF input power,1.5 kV HBM ESD hardness High transition frequency fT = 75 GHz
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: D33D3 | BSR20 | CX956D | 2SC589 | BC738-40 | 2SD439
History: D33D3 | BSR20 | CX956D | 2SC589 | BC738-40 | 2SD439



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