BFR843EL3 Specs and Replacement
Type Designator: BFR843EL3
SMD Transistor Code: T2
Material of Transistor: SiGe
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.125 W
Maximum Collector-Base Voltage |Vcb|: 2.9 V
Maximum Collector-Emitter Voltage |Vce|: 2.25 V
Maximum Collector Current |Ic max|: 0.055 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Collector Capacitance (Cc): 0.07 pF
Forward Current Transfer Ratio (hFE), MIN: 230
Package: TSLP3-10
BFR843EL3 Substitution
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BFR843EL3 datasheet
BFR843EL3 Low noise broadband pre-matched RF bipolar transistor Product description The BFR843EL3 is a low noise dual band pre-matched transistor in a low profile package for high speed and low power consumption applications. Feature list Unique combination of high end RF performance and robustness 20 dBm maximum RF input power and 1 kV HBM ESD hardness High transition frequenc... See More ⇒
BFR840L3RHESD SiGe C NPN RF bipolar transistor Product description The BFR840L3RHESD is a dicrete RF heterojunction bipolar transistor (HBT) with an integrated ESD protection suitable for 5 GHz band applications. Feature list Unique combination of high end RF performance and robustness 20 dBm maximum RF input power, 1.5 kV HBM ESD hardness High transition frequency fT = 75 GHz ... See More ⇒
Detailed specifications: BFR193F , BFR193L3 , BFR193W , BFR360L3 , BFR380F , BFR740EL3 , BFR740L3RH , BFR840L3RHESD , 2SC5198 , SMBT3906L3 , LBC856AWT1G , L2SA1037AKQLT3G , L2SA1774QT3G , L2SA1774RT3G , L2SA1774ST3G , L2SA812QLT3G , L2SA812RLT3G .
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