All Transistors. BFR843EL3 Datasheet

 

BFR843EL3 Datasheet and Replacement


   Type Designator: BFR843EL3
   SMD Transistor Code: T2
   Material of Transistor: SiGe
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.125 W
   Maximum Collector-Base Voltage |Vcb|: 2.9 V
   Maximum Collector-Emitter Voltage |Vce|: 2.25 V
   Maximum Collector Current |Ic max|: 0.055 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Collector Capacitance (Cc): 0.07 pF
   Forward Current Transfer Ratio (hFE), MIN: 230
   Noise Figure, dB: -
   Package: TSLP3-10
 

 BFR843EL3 Substitution

   - BJT ⓘ Cross-Reference Search

   

BFR843EL3 Datasheet (PDF)

 ..1. Size:539K  infineon
 bfr843el3.pdf pdf_icon

BFR843EL3

BFR843EL3Low noise broadband pre-matched RF bipolar transistorProduct descriptionThe BFR843EL3 is a low noise dual band pre-matched transistor in a low profile packagefor high speed and low power consumption applications.Feature list Unique combination of high end RF performance and robustness: 20 dBm maximum RF input power and1 kV HBM ESD hardness High transition frequenc

 9.1. Size:464K  infineon
 bfr840l3rhesd.pdf pdf_icon

BFR843EL3

BFR840L3RHESDSiGe:C NPN RF bipolar transistorProduct descriptionThe BFR840L3RHESD is a dicrete RF heterojunction bipolar transistor (HBT) with anintegrated ESD protection suitable for 5 GHz band applications.Feature list Unique combination of high end RF performance and robustness: 20 dBm maximum RF input power,1.5 kV HBM ESD hardness High transition frequency fT = 75 GHz

Datasheet: BFR193F , BFR193L3 , BFR193W , BFR360L3 , BFR380F , BFR740EL3 , BFR740L3RH , BFR840L3RHESD , 2SC2383Y , SMBT3906L3 , LBC856AWT1G , L2SA1037AKQLT3G , L2SA1774QT3G , L2SA1774RT3G , L2SA1774ST3G , L2SA812QLT3G , L2SA812RLT3G .

Keywords - BFR843EL3 transistor datasheet

 BFR843EL3 cross reference
 BFR843EL3 equivalent finder
 BFR843EL3 lookup
 BFR843EL3 substitution
 BFR843EL3 replacement

 

 
Back to Top

 


 
.