BFR843EL3 Datasheet, Equivalent, Cross Reference Search
Type Designator: BFR843EL3
SMD Transistor Code: T2
Material of Transistor: SiGe
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.125 W
Maximum Collector-Base Voltage |Vcb|: 2.9 V
Maximum Collector-Emitter Voltage |Vce|: 2.25 V
Maximum Collector Current |Ic max|: 0.055 A
Max. Operating Junction Temperature (Tj): 150 °C
Collector Capacitance (Cc): 0.07 pF
Forward Current Transfer Ratio (hFE), MIN: 230
Noise Figure, dB: -
Package: TSLP3-10
BFR843EL3 Transistor Equivalent Substitute - Cross-Reference Search
BFR843EL3 Datasheet (PDF)
bfr843el3.pdf
BFR843EL3Low noise broadband pre-matched RF bipolar transistorProduct descriptionThe BFR843EL3 is a low noise dual band pre-matched transistor in a low profile packagefor high speed and low power consumption applications.Feature list Unique combination of high end RF performance and robustness: 20 dBm maximum RF input power and1 kV HBM ESD hardness High transition frequenc
bfr840l3rhesd.pdf
BFR840L3RHESDSiGe:C NPN RF bipolar transistorProduct descriptionThe BFR840L3RHESD is a dicrete RF heterojunction bipolar transistor (HBT) with anintegrated ESD protection suitable for 5 GHz band applications.Feature list Unique combination of high end RF performance and robustness: 20 dBm maximum RF input power,1.5 kV HBM ESD hardness High transition frequency fT = 75 GHz
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
