All Transistors. BFR843EL3 Datasheet

 

BFR843EL3 Datasheet and Replacement


   Type Designator: BFR843EL3
   SMD Transistor Code: T2
   Material of Transistor: SiGe
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.125 W
   Maximum Collector-Base Voltage |Vcb|: 2.9 V
   Maximum Collector-Emitter Voltage |Vce|: 2.25 V
   Maximum Collector Current |Ic max|: 0.055 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Collector Capacitance (Cc): 0.07 pF
   Forward Current Transfer Ratio (hFE), MIN: 230
   Noise Figure, dB: -
   Package: TSLP3-10
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BFR843EL3 Datasheet (PDF)

 ..1. Size:539K  infineon
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BFR843EL3

BFR843EL3Low noise broadband pre-matched RF bipolar transistorProduct descriptionThe BFR843EL3 is a low noise dual band pre-matched transistor in a low profile packagefor high speed and low power consumption applications.Feature list Unique combination of high end RF performance and robustness: 20 dBm maximum RF input power and1 kV HBM ESD hardness High transition frequenc

 9.1. Size:464K  infineon
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BFR843EL3

BFR840L3RHESDSiGe:C NPN RF bipolar transistorProduct descriptionThe BFR840L3RHESD is a dicrete RF heterojunction bipolar transistor (HBT) with anintegrated ESD protection suitable for 5 GHz band applications.Feature list Unique combination of high end RF performance and robustness: 20 dBm maximum RF input power,1.5 kV HBM ESD hardness High transition frequency fT = 75 GHz

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: HS6015 | TN5133 | 2SA629 | BSX22 | AD-KTA1505-GR | 2SD1273A | 2SC3780F

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