2SA1195
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SA1195
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 10
W
Tensión colector-base (Vcb): 40
V
Tensión colector-emisor (Vce): 40
V
Tensión emisor-base (Veb): 5
V
Corriente del colector DC máxima (Ic): 3
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 50
MHz
Capacitancia de salida (Cc): 35
pF
Ganancia de corriente contínua (hfe): 80
Paquete / Cubierta:
TO126
Búsqueda de reemplazo de transistor bipolar 2SA1195
2SA1195
Datasheet (PDF)
..2. Size:148K jmnic
2sa1195.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1195 DESCRIPTION With TO-202 package High power dissipation Complement to type 2SC2483 APPLICATIONS For high voltage and general purpose amplification PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-202) and symbol3 EmitterAbsolute maximum ratings (Ta=25) SYM
..3. Size:161K inchange semiconductor
2sa1195.pdf
isc Silicon PNP Power Transistor 2SA1195DESCRIPTIONLow Collector Saturation VoltageHigh voltageComplement to Type 2SC2483Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio frequency power amplifiersABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage -160 VCBOV Co
8.2. Size:118K rohm
2sa1199.pdf
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8.3. Size:34K hitachi
2sa1193.pdf
2SA1193(K)Silicon PNP Epitaxial, DarlingtonApplicationHigh gain amplifierOutlineTO-92MOD231. Emitter2. Collector3. Base13212SA1193(K)Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 60 VCollector to emitter voltage VCEO 60 VEmitter to base voltage VEBO 7 VCollector current IC 0.5 ACollector peak
8.4. Size:45K hitachi
2sa1190 2sa1191.pdf
2SA1190, 2SA1191Silicon PNP EpitaxialApplication Low frequency low noise amplifier Complementary pair with 2SC2855 and 2SC2856OutlineTO-92 (1)1. Emitter2. Collector3. Base3212SA1190, 2SA1191Absolute Maximum Ratings (Ta = 25C)Item Symbol 2SA1190 2SA1191 UnitCollector to base voltage VCBO 90 120 VCollector to emitter voltage VCEO 90 120 VEm
8.5. Size:35K hitachi
2sa1193k.pdf
2SA1193(K)Silicon PNP Epitaxial, DarlingtonApplicationHigh gain amplifierOutlineTO-92MOD231. Emitter2. Collector3. Base13212SA1193(K)Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 60 VCollector to emitter voltage VCEO 60 VEmitter to base voltage VEBO 7 VCollector current IC 0.5 ACollector peak
8.6. Size:35K hitachi
2sa1194.pdf
2SA1194(K)Silicon PNP EpitaxialApplicationHigh gain amplifierOutlineTO-126 MOD231. Emitter2. Collector3. Base1231Absolute Maximum Ratings (Ta = 25C)Item Symbol Rating UnitCollector to base voltage VCBO 60 VCollector to emitter voltage VCEO 60 VEmitter to base voltage VEBO 7 VCollector current IC 1 ACollector peak current IC(peak) 2 AC
Otros transistores... 2N3200
, 2N3201
, 2N3202
, 2N3203
, 2N3204
, 2N3205
, 2N3206
, 2N3207
, B772
, 2N3209
, 2N3209AQF
, 2N3209CSM
, 2N3209DCSM
, 2N3209L
, 2N321
, 2N3210
, 2N3211
.