2SA1195 Datasheet. Specs and Replacement
Type Designator: 2SA1195 📄📄
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 10 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 40 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 50 MHz
Collector Capacitance (Cc): 35 pF
Forward Current Transfer Ratio (hFE), MIN: 80
Package: TO126
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2SA1195 datasheet
JMnic Product Specification Silicon PNP Power Transistors 2SA1195 DESCRIPTION With TO-202 package High power dissipation Complement to type 2SC2483 APPLICATIONS For high voltage and general purpose amplification PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-202) and symbol 3 Emitter Absolute maximum ratings (Ta=25 ) SYM... See More ⇒
isc Silicon PNP Power Transistor 2SA1195 DESCRIPTION Low Collector Saturation Voltage High voltage Complement to Type 2SC2483 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio frequency power amplifiers ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage -160 V CBO V Co... See More ⇒
Detailed specifications: 2SA1188, 2SA1189, 2SA119, 2SA1190, 2SA1191, 2SA1193, 2SA1194, 2SA1194K, 13009, 2SA1196, 2SA1197, 2SA1198, 2SA1198S, 2SA1199, 2SA1199S, 2SA12, 2SA120
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