L2SC3356WT3G Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: L2SC3356WT3G

Código: 24

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.15 W

Tensión colector-base (Vcb): 20 V

Tensión colector-emisor (Vce): 12 V

Tensión emisor-base (Veb): 3 V

Corriente del colector DC máxima (Ic): 0.1 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 7000 MHz

Ganancia de corriente contínua (hFE): 82

Encapsulados: SC70

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L2SC3356WT3G datasheet

 ..1. Size:167K  lrc
 l2sc3356wt1g l2sc3356wt3g.pdf pdf_icon

L2SC3356WT3G

DATA SHEET LESHAN RADIO COMPANY, LTD. DESCRIPTION L2SC3356WT1G The L2SC3356WT1is an NPN silicon epitaxial transistor designed for S-L2SC3356WT1G low noise amplifier at VHF, UHF and CATV band. It has dynamic range and good current characteristic. 3 S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.

 4.1. Size:167K  lrc
 l2sc3356wt1g.pdf pdf_icon

L2SC3356WT3G

DATA SHEET LESHAN RADIO COMPANY, LTD. DESCRIPTION L2SC3356WT1G The L2SC3356WT1is an NPN silicon epitaxial transistor designed for S-L2SC3356WT1G low noise amplifier at VHF, UHF and CATV band. It has dynamic range and good current characteristic. 3 S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.

 6.1. Size:140K  lrc
 l2sc3356lt1g.pdf pdf_icon

L2SC3356WT3G

DATA SHEET LESHAN RADIO COMPANY, LTD. L2SC3356LT1G DESCRIPTION The L2SC3356LT1 is an NPN silicon epitaxial transistor designed for S-L2SC3356LT1G low noise amplifier at VHF, UHF and CATV band. It has dynamic range and good current characteristic. 3 S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capab

 6.2. Size:140K  lrc
 l2sc3356lt1g l2sc3356lt3g.pdf pdf_icon

L2SC3356WT3G

DATA SHEET LESHAN RADIO COMPANY, LTD. L2SC3356LT1G DESCRIPTION The L2SC3356LT1 is an NPN silicon epitaxial transistor designed for S-L2SC3356LT1G low noise amplifier at VHF, UHF and CATV band. It has dynamic range and good current characteristic. 3 S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capab

MOSTRAR MÁS

Otros transistores... L2SC1623QLT3G, L2SC1623RLT3G, L2SC1623SLT3G, L2SC2411KRLT3G, L2SC2412KQLT3G, L2SC2412KRLT3G, L2SC2412KSLT3G, L2SC3356LT3G, S9018, L2SC3838LT3G, L2SC4081QT3G, L2SC4081RT3G, L2SC4081ST3G, L2SC4617QT3G, L2SC4617RT3G, L2SC4617ST3G, L8050HPLT3G