L2SC3356WT3G Datasheet PDF and Replacements, Transistor Equivalent Finder, Cross Reference

L2SC3356WT3G Datasheet. Specs and Replacement

Type Designator: L2SC3356WT3G 📄📄

SMD Transistor Code: 24

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.15 W

Maximum Collector-Base Voltage |Vcb|: 20 V

Maximum Collector-Emitter Voltage |Vce|: 12 V

Maximum Emitter-Base Voltage |Veb|: 3 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 7000 MHz

Forward Current Transfer Ratio (hFE), MIN: 82

Noise Figure, dB: -

Package: SC70

L2SC3356WT3G Substitution

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L2SC3356WT3G datasheet

..1. Size:167K lrc

l2sc3356wt1g l2sc3356wt3g.pdf pdf_icon

DATA SHEET LESHAN RADIO COMPANY, LTD. DESCRIPTION L2SC3356WT1G The L2SC3356WT1is an NPN silicon epitaxial transistor designed for S-L2SC3356WT1G low noise amplifier at VHF, UHF and CATV band. It has dynamic range and good current characteristic. 3 S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. ... See More ⇒

4.1. Size:167K lrc

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6.1. Size:140K lrc

l2sc3356lt1g.pdf pdf_icon

DATA SHEET LESHAN RADIO COMPANY, LTD. L2SC3356LT1G DESCRIPTION The L2SC3356LT1 is an NPN silicon epitaxial transistor designed for S-L2SC3356LT1G low noise amplifier at VHF, UHF and CATV band. It has dynamic range and good current characteristic. 3 S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capab... See More ⇒

6.2. Size:140K lrc

l2sc3356lt1g l2sc3356lt3g.pdf pdf_icon