L8550HQLT3G Todos los transistores

 

L8550HQLT3G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: L8550HQLT3G
   Código: 1HD
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.225 W
   Tensión colector-base (Vcb): 40 V
   Tensión colector-emisor (Vce): 25 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 1.5 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Ganancia de corriente contínua (hfe): 150
   Paquete / Cubierta: SOT-23
 

 Búsqueda de reemplazo de L8550HQLT3G

   - Selección ⓘ de transistores por parámetros

 

L8550HQLT3G Datasheet (PDF)

 ..1. Size:84K  lrc
 l8550hplt1g l8550hplt3g l8550hqlt1g l8550hqlt3g l8550hrlt1g l8550hrlt3g l8550hslt1g l8550hslt3g.pdf pdf_icon

L8550HQLT3G

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsL8550HPLT1GSeriesPNP SiliconS-L8550HPLT1GFEATURESeries High current capacity in compact package. Epitaxial planar type. PNP complement: L8550H 3 We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site 1and Control Change Requir

 5.1. Size:84K  lrc
 l8550hplt1g l8550hqlt1g l8550hrlt1g l8550hslt1g.pdf pdf_icon

L8550HQLT3G

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsL8550HPLT1GSeriesPNP SiliconS-L8550HPLT1GFEATURESeries High current capacity in compact package. Epitaxial planar type. PNP complement: L8550H 3 We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site 1and Control Change Requir

 5.2. Size:85K  lrc
 l8550hqlt1g.pdf pdf_icon

L8550HQLT3G

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsL8550HPLT1GSeriesPNP SiliconS-L8550HPLT1GFEATURESeries High current capacity in compact package. Epitaxial planar type. PNP complement: L8550H3 We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site1and Control Change Requir

 7.1. Size:978K  cn yongyutai
 l8550hq.pdf pdf_icon

L8550HQLT3G

L8550HQGeneral Purpose TransistorsPNP SiliconFEATURECOLLECTOR High current capacity in compact package. 3 Epitaxial planar type. We declare that the material of product compliance with RoHS requirements. 1BASE2EMITTERMAXIMUM RATINGSRating Symbol Max UnitCollector-Emitter Voltage V -25 VCEOCollector-Base Voltage VCBO -40 VEmitter-Base Voltage VEBO -5 VCollecto

MOSTRAR MÁS

Otros transistores... 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2SD1047 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .

History: L9013PLT3G | CHEMB10GP | CHDTC124EUGP | T1334 | T2455 | TIP30

 

 
Back to Top

 


 
.