L8550HQLT3G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

LESHAN RADIO COMPANY, LTD. General Purpose Transistors L8550HPLT1G Series PNP Silicon S-L8550HPLT1G FEATURE Series High current capacity in compact package. Epitaxial planar type. PNP complement L8550H 3 We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site 1 and Control Change Requir

LESHAN RADIO COMPANY, LTD. General Purpose Transistors L8550HPLT1G Series PNP Silicon S-L8550HPLT1G FEATURE Series High current capacity in compact package. Epitaxial planar type. PNP complement L8550H 3 We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site 1 and Control Change Requir

LESHAN RADIO COMPANY, LTD. General Purpose Transistors L8550HPLT1G Series PNP Silicon S-L8550HPLT1G FEATURE Series High current capacity in compact package. Epitaxial planar type. PNP complement L8550H 3 We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site 1 and Control Change Requir

L8550HQ General Purpose Transistors PNP Silicon FEATURE COLLECTOR High current capacity in compact package. 3 Epitaxial planar type. We declare that the material of product compliance with RoHS requirements. 1 BASE 2 EMITTER MAXIMUM RATINGS Rating Symbol Max Unit Collector-Emitter Voltage V -25 V CEO Collector-Base Voltage VCBO -40 V Emitter-Base Voltage VEBO -5 V Collecto