L8550HQLT3G Datasheet. Specs and Replacement

Type Designator: L8550HQLT3G

SMD Transistor Code: 1HD

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.225 W

Maximum Collector-Base Voltage |Vcb|: 40 V

Maximum Collector-Emitter Voltage |Vce|: 25 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 1.5 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 150

Noise Figure, dB: -

Package: SOT-23

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L8550HQLT3G datasheet

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 l8550hplt1g l8550hplt3g l8550hqlt1g l8550hqlt3g l8550hrlt1g l8550hrlt3g l8550hslt1g l8550hslt3g.pdf pdf_icon

L8550HQLT3G

LESHAN RADIO COMPANY, LTD. General Purpose Transistors L8550HPLT1G Series PNP Silicon S-L8550HPLT1G FEATURE Series High current capacity in compact package. Epitaxial planar type. PNP complement L8550H 3 We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site 1 and Control Change Requir... See More ⇒

 5.1. Size:84K  lrc

 l8550hplt1g l8550hqlt1g l8550hrlt1g l8550hslt1g.pdf pdf_icon

L8550HQLT3G

LESHAN RADIO COMPANY, LTD. General Purpose Transistors L8550HPLT1G Series PNP Silicon S-L8550HPLT1G FEATURE Series High current capacity in compact package. Epitaxial planar type. PNP complement L8550H 3 We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site 1 and Control Change Requir... See More ⇒

 5.2. Size:85K  lrc

 l8550hqlt1g.pdf pdf_icon

L8550HQLT3G

LESHAN RADIO COMPANY, LTD. General Purpose Transistors L8550HPLT1G Series PNP Silicon S-L8550HPLT1G FEATURE Series High current capacity in compact package. Epitaxial planar type. PNP complement L8550H 3 We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site 1 and Control Change Requir... See More ⇒

 7.1. Size:978K  cn yongyutai

 l8550hq.pdf pdf_icon

L8550HQLT3G

L8550HQ General Purpose Transistors PNP Silicon FEATURE COLLECTOR High current capacity in compact package. 3 Epitaxial planar type. We declare that the material of product compliance with RoHS requirements. 1 BASE 2 EMITTER MAXIMUM RATINGS Rating Symbol Max Unit Collector-Emitter Voltage V -25 V CEO Collector-Base Voltage VCBO -40 V Emitter-Base Voltage VEBO -5 V Collecto... See More ⇒

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Detailed specifications: L8050HSLT3G, L8050PLT3G, L8050QLT3G, L8050RLT1G, L8050RLT3G, L8050SLT1G, L8050SLT3G, L8550HPLT3G, C945, L8550HRLT3G, L8550HSLT3G, L8550PLT3G, L8550QLT3G, L8550RLT1G, L8550RLT3G, L8550SLT1G, L8550SLT3G

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