L8550HQLT3G - аналоги и даташиты биполярного транзистора

 

L8550HQLT3G - Даташиты. Аналоги. Основные параметры


   Наименование производителя: L8550HQLT3G
   Маркировка: 1HD
   Тип материала: Si
   Полярность: PNP
   Максимальная рассеиваемая мощность (Pc): 0.225 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 40 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 25 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
   Макcимальный постоянный ток коллектора (Ic): 1.5 A
   Предельная температура PN-перехода (Tj): 150 °C
   Статический коэффициент передачи тока (hfe): 150
   Корпус транзистора: SOT-23

 Аналоги (замена) для L8550HQLT3G

 

L8550HQLT3G Datasheet (PDF)

 ..1. Size:84K  lrc
 l8550hplt1g l8550hplt3g l8550hqlt1g l8550hqlt3g l8550hrlt1g l8550hrlt3g l8550hslt1g l8550hslt3g.pdf pdf_icon

L8550HQLT3G

LESHAN RADIO COMPANY, LTD. General Purpose Transistors L8550HPLT1G Series PNP Silicon S-L8550HPLT1G FEATURE Series High current capacity in compact package. Epitaxial planar type. PNP complement L8550H 3 We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site 1 and Control Change Requir

 5.1. Size:84K  lrc
 l8550hplt1g l8550hqlt1g l8550hrlt1g l8550hslt1g.pdf pdf_icon

L8550HQLT3G

LESHAN RADIO COMPANY, LTD. General Purpose Transistors L8550HPLT1G Series PNP Silicon S-L8550HPLT1G FEATURE Series High current capacity in compact package. Epitaxial planar type. PNP complement L8550H 3 We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site 1 and Control Change Requir

 5.2. Size:85K  lrc
 l8550hqlt1g.pdf pdf_icon

L8550HQLT3G

LESHAN RADIO COMPANY, LTD. General Purpose Transistors L8550HPLT1G Series PNP Silicon S-L8550HPLT1G FEATURE Series High current capacity in compact package. Epitaxial planar type. PNP complement L8550H 3 We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site 1 and Control Change Requir

 7.1. Size:978K  cn yongyutai
 l8550hq.pdf pdf_icon

L8550HQLT3G

L8550HQ General Purpose Transistors PNP Silicon FEATURE COLLECTOR High current capacity in compact package. 3 Epitaxial planar type. We declare that the material of product compliance with RoHS requirements. 1 BASE 2 EMITTER MAXIMUM RATINGS Rating Symbol Max Unit Collector-Emitter Voltage V -25 V CEO Collector-Base Voltage VCBO -40 V Emitter-Base Voltage VEBO -5 V Collecto

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Другие транзисторы... L8050HSLT3G , L8050PLT3G , L8050QLT3G , L8050RLT1G , L8050RLT3G , L8050SLT1G , L8050SLT3G , L8550HPLT3G , C945 , L8550HRLT3G , L8550HSLT3G , L8550PLT3G , L8550QLT3G , L8550RLT1G , L8550RLT3G , L8550SLT1G , L8550SLT3G .

 

 
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