LBSS4350SY3T1G Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: LBSS4350SY3T1G
Código: A3
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.55 W
Tensión colector-base (Vcb): 60 V
Tensión colector-emisor (Vce): 50 V
Tensión emisor-base (Veb): 6 V
Corriente del colector DC máxima (Ic): 3 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 148 MHz
Capacitancia de salida (Cc): 15 pF
Ganancia de corriente contínua (hFE): 200
Encapsulados: SOT89
Búsqueda de reemplazo de LBSS4350SY3T1G
- Selecciónⓘ de transistores por parámetros
LBSS4350SY3T1G datasheet
lbss4350sy3t1g.pdf
LBSS4350SY3T1G S-LBSS4350SY3T1G NPN TRANSISTOR 1 2 1. FEATURES 3 Low collector-to-emitter saturation voltage. Fast switching speed. SOT89 Large current capacity and wide ASO. We declare that the material of product compliance with RoHS requirements and Halogen Free. 2 S- prefix for automotive and other applications requiring unique site and control chang
lbss4250y3t1g.pdf
LBSS4250Y3T1G S-LBSS4250Y3T1G 1 NPN 2.0A 50V Middle Power Transistor 2 3 1. FEATURES Suitable for Middle Power Driver SOT89 Complementary NPN Types Low VCE(sat) We declare that the material of product compliance with 2 RoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring 1 unique site and control change requireme
lbss4240lt1g.pdf
LESHAN RADIO COMPANY, LTD. General Purpose Transistors 40V,2A Low VCE(sat) NPN Silicon FEATURES Low collector-emitter saturation voltage High current capability Improved device reliability due to reduced heat generation LBSS4240LT1G Replacement for SOT89/SOT223 standard packaged S-LBSS4240LT1G transistors. 3 We declare that the material of product complian
lbss4240lt1g lbss4240lt3g.pdf
LBSS4240LT1G S-LBSS4240LT1G General Purpose Transistors NPN Silicon 1. FEATURES Low collector-emitter saturation voltage High current capability Improved device reliability due to reduced heat generation We declare that the material of product compliance with RoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring SOT23
Otros transistores... LBC857CTT1G, LBC858BLT3G, LBC858CLT3G, LBC859BLT1G, LBC859CLT1G, LBC859CLT3G, LBSS4240LT3G, LBSS4250Y3T1G, 2SC2383, LBSS5240LT3G, LBSS5250Y3T1G, LBSS5350SY3T1G, LBTN180Y3T1G, LBTN180Z4TZHG, LBTP180Y3T1G, LBTP460Z4TZHG, LDTA114EET1G
🌐 : EN ES РУ
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550
Popular searches
2n7000 equivalent | tip31 | tip122 transistor | 2sc1079 | 2sc1815 equivalent | 2sa1220 | 2sa940 | 2sc627




