All Transistors. LBSS4350SY3T1G Datasheet

 

LBSS4350SY3T1G Datasheet, Equivalent, Cross Reference Search


   Type Designator: LBSS4350SY3T1G
   SMD Transistor Code: A3
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.55 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 3 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 148 MHz
   Collector Capacitance (Cc): 15 pF
   Forward Current Transfer Ratio (hFE), MIN: 200
   Noise Figure, dB: -
   Package: SOT89

 LBSS4350SY3T1G Transistor Equivalent Substitute - Cross-Reference Search

   

LBSS4350SY3T1G Datasheet (PDF)

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lbss4350sy3t1g.pdf

LBSS4350SY3T1G
LBSS4350SY3T1G

LBSS4350SY3T1GS-LBSS4350SY3T1GNPN TRANSISTOR121. FEATURES3Low collector-to-emitter saturation voltage.Fast switching speed.SOT89Large current capacity and wide ASO.We declare that the material of product compliance with RoHS requirements and Halogen Free.2S- prefix for automotive and other applications requiringunique site and control chang

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lbss4250y3t1g.pdf

LBSS4350SY3T1G
LBSS4350SY3T1G

LBSS4250Y3T1GS-LBSS4250Y3T1G1NPN 2.0A 50V Middle Power Transistor231. FEATURESSuitable for Middle Power DriverSOT89Complementary NPN TypesLow VCE(sat)We declare that the material of product compliance with2 RoHS requirements and Halogen Free.S- prefix for automotive and other applications requiring1unique site and control change requireme

 9.2. Size:929K  lrc
lbss4240lt1g.pdf

LBSS4350SY3T1G
LBSS4350SY3T1G

LESHAN RADIO COMPANY, LTD.General Purpose Transistors40V,2A Low VCE(sat) NPN SiliconFEATURES Low collector-emitter saturation voltage High current capability Improved device reliability due to reduced heat generation LBSS4240LT1G Replacement for SOT89/SOT223 standard packaged S-LBSS4240LT1G transistors.3 We declare that the material of product complian

 9.3. Size:309K  lrc
lbss4240lt1g lbss4240lt3g.pdf

LBSS4350SY3T1G
LBSS4350SY3T1G

LBSS4240LT1GS-LBSS4240LT1GGeneral Purpose Transistors NPN Silicon1. FEATURESLow collector-emitter saturation voltageHigh current capabilityImproved device reliability due to reduced heat generationWe declare that the material of product compliance withRoHS requirements and Halogen Free.S- prefix for automotive and other applications requiringSOT23

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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