LBSS4350SY3T1G datasheet, аналоги, основные параметры

Наименование производителя: LBSS4350SY3T1G

Маркировка: A3

Тип материала: Si

Полярность: NPN

Предельные значения

Максимальная рассеиваемая мощность (Pc): 0.55 W

Макcимально допустимое напряжение коллектор-база (Ucb): 60 V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V

Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V

Макcимальный постоянный ток коллектора (Ic): 3 A

Предельная температура PN-перехода (Tj): 150 °C

Электрические характеристики

Граничная частота коэффициента передачи тока (ft): 148 MHz

Ёмкость коллекторного перехода (Cc): 15 pf

Статический коэффициент передачи тока (hFE): 200

Корпус транзистора: SOT89

 Аналоги (замена) для LBSS4350SY3T1G

- подборⓘ биполярного транзистора по параметрам

 

LBSS4350SY3T1G даташит

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 lbss4350sy3t1g.pdf pdf_icon

LBSS4350SY3T1G

LBSS4350SY3T1G S-LBSS4350SY3T1G NPN TRANSISTOR 1 2 1. FEATURES 3 Low collector-to-emitter saturation voltage. Fast switching speed. SOT89 Large current capacity and wide ASO. We declare that the material of product compliance with RoHS requirements and Halogen Free. 2 S- prefix for automotive and other applications requiring unique site and control chang

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 lbss4250y3t1g.pdf pdf_icon

LBSS4350SY3T1G

LBSS4250Y3T1G S-LBSS4250Y3T1G 1 NPN 2.0A 50V Middle Power Transistor 2 3 1. FEATURES Suitable for Middle Power Driver SOT89 Complementary NPN Types Low VCE(sat) We declare that the material of product compliance with 2 RoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring 1 unique site and control change requireme

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 lbss4240lt1g.pdf pdf_icon

LBSS4350SY3T1G

LESHAN RADIO COMPANY, LTD. General Purpose Transistors 40V,2A Low VCE(sat) NPN Silicon FEATURES Low collector-emitter saturation voltage High current capability Improved device reliability due to reduced heat generation LBSS4240LT1G Replacement for SOT89/SOT223 standard packaged S-LBSS4240LT1G transistors. 3 We declare that the material of product complian

 9.3. Size:309K  lrc
 lbss4240lt1g lbss4240lt3g.pdf pdf_icon

LBSS4350SY3T1G

LBSS4240LT1G S-LBSS4240LT1G General Purpose Transistors NPN Silicon 1. FEATURES Low collector-emitter saturation voltage High current capability Improved device reliability due to reduced heat generation We declare that the material of product compliance with RoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring SOT23

ПОКАЗАТЬ ЕЩЁ

Другие транзисторы: LBC857CTT1G, LBC858BLT3G, LBC858CLT3G, LBC859BLT1G, LBC859CLT1G, LBC859CLT3G, LBSS4240LT3G, LBSS4250Y3T1G, 2SC2383, LBSS5240LT3G, LBSS5250Y3T1G, LBSS5350SY3T1G, LBTN180Y3T1G, LBTN180Z4TZHG, LBTP180Y3T1G, LBTP460Z4TZHG, LDTA114EET1G