LBSS5350SY3T1G Todos los transistores

 

LBSS5350SY3T1G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: LBSS5350SY3T1G
   Código: D3
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.55 W
   Tensión colector-base (Vcb): 60 V
   Tensión colector-emisor (Vce): 50 V
   Tensión emisor-base (Veb): 6 V
   Corriente del colector DC máxima (Ic): 3 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 150 MHz
   Capacitancia de salida (Cc): 39 pF
   Ganancia de corriente contínua (hfe): 200
   Paquete / Cubierta: SOT89
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LBSS5350SY3T1G Datasheet (PDF)

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 lbss5350sy3t1g.pdf pdf_icon

LBSS5350SY3T1G

LBSS5350SY3T1GS-LBSS5350SY3T1GPNP TRANSISTOR121. FEATURES3Low collector-to-emitter saturation voltage.Fast switching speed.SOT89Large current capacity and wide ASO.We declare that the material of product compliance with RoHS requirements and Halogen Free.2S- prefix for automotive and other applications requiringunique site and control chang

 9.1. Size:616K  lrc
 lbss5240lt1g lbss5240lt3g.pdf pdf_icon

LBSS5350SY3T1G

LESHAN RADIO COMPANY, LTD.General Purpose Transistors-40V,-2A Low VCE(sat) PNP SiliconFEATURES Low collector-emitter saturation voltage High current capability Improved device reliability due to reduced heat LBSS5240LT1G generationS-LBSS5240LT1G Replacement for SOT89/SOT223 standard packaged transistors.3 We declare that the material of product complian

 9.2. Size:811K  lrc
 lbss5250y3t1g.pdf pdf_icon

LBSS5350SY3T1G

LBSS5250Y3T1GS-LBSS5250Y3T1GMidium Power PNP Transistors121. FEATURES3Low saturation voltage, typicallyHigh speed switchingSOT89We declare that the material of product compliance with RoHS requirements and Halogen Free.S- prefix for automotive and other applications requiring2unique site and control change requirements; AEC-Q101qualified and PPA

 9.3. Size:609K  lrc
 lbss5240lt1g.pdf pdf_icon

LBSS5350SY3T1G

LESHAN RADIO COMPANY, LTD.General Purpose Transistors-40V,-2A Low VCE(sat) PNP SiliconFEATURES Low collector-emitter saturation voltage High current capability Improved device reliability due to reduced heat LBSS5240LT1G generationS-LBSS5240LT1G Replacement for SOT89/SOT223 standard packaged transistors.3 We declare that the material of product complian

MOSTRAR MÁS

Otros transistores... 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , MJE340 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

History: TN4140 | 2SD389A | 3DD13005_B3 | BSW75 | KRX105E | 2SD1885C | BSY61

 

 
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