LBSS5350SY3T1G Datasheet. Specs and Replacement
Type Designator: LBSS5350SY3T1G
SMD Transistor Code: D3
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.55 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 150 MHz
Collector Capacitance (Cc): 39 pF
Forward Current Transfer Ratio (hFE), MIN: 200
Package: SOT89
LBSS5350SY3T1G Substitution
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LBSS5350SY3T1G datasheet
LBSS5350SY3T1G S-LBSS5350SY3T1G PNP TRANSISTOR 1 2 1. FEATURES 3 Low collector-to-emitter saturation voltage. Fast switching speed. SOT89 Large current capacity and wide ASO. We declare that the material of product compliance with RoHS requirements and Halogen Free. 2 S- prefix for automotive and other applications requiring unique site and control chang... See More ⇒
LESHAN RADIO COMPANY, LTD. General Purpose Transistors -40V,-2A Low VCE(sat) PNP Silicon FEATURES Low collector-emitter saturation voltage High current capability Improved device reliability due to reduced heat LBSS5240LT1G generation S-LBSS5240LT1G Replacement for SOT89/SOT223 standard packaged transistors. 3 We declare that the material of product complian... See More ⇒
LBSS5250Y3T1G S-LBSS5250Y3T1G Midium Power PNP Transistors 1 2 1. FEATURES 3 Low saturation voltage, typically High speed switching SOT89 We declare that the material of product compliance with RoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring 2 unique site and control change requirements; AEC-Q101 qualified and PPA... See More ⇒
LESHAN RADIO COMPANY, LTD. General Purpose Transistors -40V,-2A Low VCE(sat) PNP Silicon FEATURES Low collector-emitter saturation voltage High current capability Improved device reliability due to reduced heat LBSS5240LT1G generation S-LBSS5240LT1G Replacement for SOT89/SOT223 standard packaged transistors. 3 We declare that the material of product complian... See More ⇒
Detailed specifications: LBC859BLT1G, LBC859CLT1G, LBC859CLT3G, LBSS4240LT3G, LBSS4250Y3T1G, LBSS4350SY3T1G, LBSS5240LT3G, LBSS5250Y3T1G, 2N2907, LBTN180Y3T1G, LBTN180Z4TZHG, LBTP180Y3T1G, LBTP460Z4TZHG, LDTA114EET1G, LDTA114TET1G, LDTA114YET1G, LDTA115EET1G
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