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LBTN180Y3T1G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: LBTN180Y3T1G
   Código: B
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.55 W
   Tensión colector-base (Vcb): 100 V
   Tensión colector-emisor (Vce): 80 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 100 MHz
   Capacitancia de salida (Cc): 6 pF
   Ganancia de corriente contínua (hfe): 100
   Paquete / Cubierta: SOT89
 

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LBTN180Y3T1G Datasheet (PDF)

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LBTN180Y3T1G

LBTN180Y3T1GS-LBTN180Y3T1GNPN power transistors121. FEATURES 3High currentHigh power dissipation capabilitySOT89We declare that the material of product compliance with RoHS requirements and Halogen Free.S- prefix for automotive and other applications requiring2unique site and control change requirements; AEC-Q101qualified and PPAP capable.12.

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LBTN180Y3T1G

LBTN180Z4TZHGS-LBTN180Z4TZHG80V NPN medium power transistors1. FEATURES High current Three current gain selections High power dissipation capability We declare that the material of product compliance withRoHS requirements and Halogen Free. SOT223 S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 q

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