LBTN180Y3T1G Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: LBTN180Y3T1G

Código: B

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.55 W

Tensión colector-base (Vcb): 100 V

Tensión colector-emisor (Vce): 80 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 1 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 100 MHz

Capacitancia de salida (Cc): 6 pF

Ganancia de corriente contínua (hFE): 100

Encapsulados: SOT89

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LBTN180Y3T1G datasheet

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LBTN180Y3T1G

LBTN180Y3T1G S-LBTN180Y3T1G NPN power transistors 1 2 1. FEATURES 3 High current High power dissipation capability SOT89 We declare that the material of product compliance with RoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring 2 unique site and control change requirements; AEC-Q101 qualified and PPAP capable. 1 2.

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LBTN180Y3T1G

LBTN180Z4TZHG S-LBTN180Z4TZHG 80V NPN medium power transistors 1. FEATURES High current Three current gain selections High power dissipation capability We declare that the material of product compliance with RoHS requirements and Halogen Free. SOT223 S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 q

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