All Transistors. LBTN180Y3T1G Datasheet

 

LBTN180Y3T1G Datasheet and Replacement


   Type Designator: LBTN180Y3T1G
   SMD Transistor Code: B
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.55 W
   Maximum Collector-Base Voltage |Vcb|: 100 V
   Maximum Collector-Emitter Voltage |Vce|: 80 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 100 MHz
   Collector Capacitance (Cc): 6 pF
   Forward Current Transfer Ratio (hFE), MIN: 100
   Noise Figure, dB: -
   Package: SOT89
 

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LBTN180Y3T1G Datasheet (PDF)

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LBTN180Y3T1G

LBTN180Y3T1GS-LBTN180Y3T1GNPN power transistors121. FEATURES 3High currentHigh power dissipation capabilitySOT89We declare that the material of product compliance with RoHS requirements and Halogen Free.S- prefix for automotive and other applications requiring2unique site and control change requirements; AEC-Q101qualified and PPAP capable.12.

 7.1. Size:1078K  lrc
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LBTN180Y3T1G

LBTN180Z4TZHGS-LBTN180Z4TZHG80V NPN medium power transistors1. FEATURES High current Three current gain selections High power dissipation capability We declare that the material of product compliance withRoHS requirements and Halogen Free. SOT223 S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 q

Datasheet: LBC859CLT1G , LBC859CLT3G , LBSS4240LT3G , LBSS4250Y3T1G , LBSS4350SY3T1G , LBSS5240LT3G , LBSS5250Y3T1G , LBSS5350SY3T1G , 13001-A , LBTN180Z4TZHG , LBTP180Y3T1G , LBTP460Z4TZHG , LDTA114EET1G , LDTA114TET1G , LDTA114YET1G , LDTA115EET1G , LDTA123EET1G .

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