LBTN180Y3T1G Datasheet, Equivalent, Cross Reference Search
Type Designator: LBTN180Y3T1G
SMD Transistor Code: B
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.55 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 6 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: SOT89
LBTN180Y3T1G Transistor Equivalent Substitute - Cross-Reference Search
LBTN180Y3T1G Datasheet (PDF)
lbtn180y3t1g.pdf
LBTN180Y3T1GS-LBTN180Y3T1GNPN power transistors121. FEATURES 3High currentHigh power dissipation capabilitySOT89We declare that the material of product compliance with RoHS requirements and Halogen Free.S- prefix for automotive and other applications requiring2unique site and control change requirements; AEC-Q101qualified and PPAP capable.12.
lbtn180z4tzhg.pdf
LBTN180Z4TZHGS-LBTN180Z4TZHG80V NPN medium power transistors1. FEATURES High current Three current gain selections High power dissipation capability We declare that the material of product compliance withRoHS requirements and Halogen Free. SOT223 S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 q
Datasheet: HA9079 , HA9500 , HA9501 , HA9502 , HA9531 , HA9531A , HA9532 , HA9532A , 2SA1015 , HCT2907A , HCT2907M , HDA412 , HDA420 , HDA496 , HEP637 , HEPG0001 , HEPG0002 .
