LBTN180Y3T1G Datasheet. Specs and Replacement
Type Designator: LBTN180Y3T1G
SMD Transistor Code: B
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.55 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 6 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Package: SOT89
LBTN180Y3T1G Substitution
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LBTN180Y3T1G datasheet
LBTN180Y3T1G S-LBTN180Y3T1G NPN power transistors 1 2 1. FEATURES 3 High current High power dissipation capability SOT89 We declare that the material of product compliance with RoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring 2 unique site and control change requirements; AEC-Q101 qualified and PPAP capable. 1 2. ... See More ⇒
LBTN180Z4TZHG S-LBTN180Z4TZHG 80V NPN medium power transistors 1. FEATURES High current Three current gain selections High power dissipation capability We declare that the material of product compliance with RoHS requirements and Halogen Free. SOT223 S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 q... See More ⇒
Detailed specifications: LBC859CLT1G, LBC859CLT3G, LBSS4240LT3G, LBSS4250Y3T1G, LBSS4350SY3T1G, LBSS5240LT3G, LBSS5250Y3T1G, LBSS5350SY3T1G, MPSA42, LBTN180Z4TZHG, LBTP180Y3T1G, LBTP460Z4TZHG, LDTA114EET1G, LDTA114TET1G, LDTA114YET1G, LDTA115EET1G, LDTA123EET1G
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