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LDTD123YLT3G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: LDTD123YLT3G
   Código: F62
   Material: Si
   Polaridad de transistor: NPN
   Resistencia de Entrada Base R1 = 2.2 kOhm
   Resistencia Base-Emisor R2 = 10 kOhm
   Ratio típica de resistencia R1/R2 = 0.22

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.2 W
   Tensión colector-base (Vcb): 50 V
   Tensión colector-emisor (Vce): 50 V
   Corriente del colector DC máxima (Ic): 0.5 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 200 MHz
   Ganancia de corriente contínua (hfe): 56
   Paquete / Cubierta: SOT23
 

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LDTD123YLT3G Datasheet (PDF)

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 ldtd123ylt1g ldtd123ylt3g.pdf pdf_icon

LDTD123YLT3G

LESHAN RADIO COMPANY, LTD.Bias Resistor TransistorNPN Silicon Surface Mount TransistorLDTD123YLT1Gwith Monolithic Bias Resistor NetworkS-LDTD123YLT1G Applications Inverter, Interface, Driver Features 31) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 12) The bias res

 4.1. Size:369K  lrc
 ldtd123ylt1g.pdf pdf_icon

LDTD123YLT3G

LESHAN RADIO COMPANY, LTD.Bias Resistor TransistorNPN Silicon Surface Mount TransistorLDTD123YLT1Gwith Monolithic Bias Resistor NetworkS-LDTD123YLT1G Applications Inverter, Interface, Driver Features 31) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 12) The bias res

 6.1. Size:350K  lrc
 ldtd123yet1g.pdf pdf_icon

LDTD123YLT3G

LESHAN RADIO COMPANY, LTD.Bias Resistor TransistorNPN Silicon Surface Mount TransistorLDTD123YET1Gwith Monolithic Bias Resistor Network Applications Inverter, Interface, Driver 3 Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input 1resistors (see equivalent circuit). 22) The bias resistors consist

 7.1. Size:326K  lrc
 ldtd123tet1g.pdf pdf_icon

LDTD123YLT3G

LESHAN RADIO COMPANY, LTD.Bias Resistor TransistorNPN Silicon Surface Mount TransistorLDTD123TET1Gwith Monolithic Bias Resistor Network Applications Inverter, Interface, Driver 3 Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input 1resistors (see equivalent circuit). 22) The bias resistors consist

MOSTRAR MÁS

Otros transistores... LDTA124XET1G , LDTA143EET1G , LDTA143TET1G , LDTA143ZET1G , LDTA144EET1G , LDTA144WET1G , LDTC144WM3T5G , LDTD123YLT1G , 2N3055 , LH8050PLT3G , LH8050QLT3G , LH8550PLT3G , LH8550QLT3G , LMBT2222ADW1T3G , LMBT2222ALT3G , LMBT2222ATT3G , LMBT2907ALT3G .

History: LBC848BLT3G | 2SC3602 | 2SC1206A

 

 
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