Справочник транзисторов. LDTD123YLT3G

 

Биполярный транзистор LDTD123YLT3G - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: LDTD123YLT3G
   Маркировка: F62
   Тип материала: Si
   Полярность: NPN
   Встроенный резистор цепи смещения R1 = 2.2 kOhm
   Встроенный резистор цепи смещения R2 = 10 kOhm
   Соотношение сопротивлений R1/R2 = 0.22
   Максимальная рассеиваемая мощность (Pc): 0.2 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 50 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
   Макcимальный постоянный ток коллектора (Ic): 0.5 A
   Предельная температура PN-перехода (Tj): 150 °C
   Граничная частота коэффициента передачи тока (ft): 200 MHz
   Статический коэффициент передачи тока (hfe): 56
   Корпус транзистора: SOT23

 Аналоги (замена) для LDTD123YLT3G

 

 

LDTD123YLT3G Datasheet (PDF)

 ..1. Size:369K  lrc
ldtd123ylt1g ldtd123ylt3g.pdf

LDTD123YLT3G
LDTD123YLT3G

LESHAN RADIO COMPANY, LTD.Bias Resistor TransistorNPN Silicon Surface Mount TransistorLDTD123YLT1Gwith Monolithic Bias Resistor NetworkS-LDTD123YLT1G Applications Inverter, Interface, Driver Features 31) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 12) The bias res

 4.1. Size:369K  lrc
ldtd123ylt1g.pdf

LDTD123YLT3G
LDTD123YLT3G

LESHAN RADIO COMPANY, LTD.Bias Resistor TransistorNPN Silicon Surface Mount TransistorLDTD123YLT1Gwith Monolithic Bias Resistor NetworkS-LDTD123YLT1G Applications Inverter, Interface, Driver Features 31) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 12) The bias res

 6.1. Size:350K  lrc
ldtd123yet1g.pdf

LDTD123YLT3G
LDTD123YLT3G

LESHAN RADIO COMPANY, LTD.Bias Resistor TransistorNPN Silicon Surface Mount TransistorLDTD123YET1Gwith Monolithic Bias Resistor Network Applications Inverter, Interface, Driver 3 Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input 1resistors (see equivalent circuit). 22) The bias resistors consist

 7.1. Size:326K  lrc
ldtd123tet1g.pdf

LDTD123YLT3G
LDTD123YLT3G

LESHAN RADIO COMPANY, LTD.Bias Resistor TransistorNPN Silicon Surface Mount TransistorLDTD123TET1Gwith Monolithic Bias Resistor Network Applications Inverter, Interface, Driver 3 Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input 1resistors (see equivalent circuit). 22) The bias resistors consist

 7.2. Size:367K  lrc
ldtd123eet1g.pdf

LDTD123YLT3G
LDTD123YLT3G

LESHAN RADIO COMPANY, LTD.Bias Resistor TransistorNPN Silicon Surface Mount TransistorLDTD123EET1Gwith Monolithic Bias Resistor Network Applications Inverter, Interface, Driver 3 Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input 1resistors (see equivalent circuit). 22) The bias resistors consist

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