LDTD123YLT3G Datasheet. Specs and Replacement
Type Designator: LDTD123YLT3G
SMD Transistor Code: F62
Material of Transistor: Si
Polarity: NPN
Built in Bias Resistor R1 = 2.2 kOhm
Built in Bias Resistor R2 = 10 kOhm
Typical Resistor Ratio R1/R2 = 0.22
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 200 MHz
Forward Current Transfer Ratio (hFE), MIN: 56
Package: SOT23
LDTD123YLT3G Substitution
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LDTD123YLT3G datasheet
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Detailed specifications: LDTA124XET1G, LDTA143EET1G, LDTA143TET1G, LDTA143ZET1G, LDTA144EET1G, LDTA144WET1G, LDTC144WM3T5G, LDTD123YLT1G, 2N3904, LH8050PLT3G, LH8050QLT3G, LH8550PLT3G, LH8550QLT3G, LMBT2222ADW1T3G, LMBT2222ALT3G, LMBT2222ATT3G, LMBT2907ALT3G
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