LMBT2222ADW1T3G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: LMBT2222ADW1T3G
Código: XX
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.15 W
Tensión colector-base (Vcb): 75 V
Tensión colector-emisor (Vce): 40 V
Tensión emisor-base (Veb): 6 V
Corriente del colector DC máxima (Ic): 0.6 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 300 MHz
Capacitancia de salida (Cc): 8 pF
Ganancia de corriente contínua (hfe): 100
Paquete / Cubierta: SC88
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LMBT2222ADW1T3G Datasheet (PDF)
lmbt2222adw1t1g lmbt2222adw1t3g.pdf

LESHAN RADIO COMPANY, LTD.Dual General Purpose TransistorsNPN SiliconLMBT2222ADW1T1GS-LMBT2222ADW1T1G We declare that material of product compliance with ROHS requirements. S- Prefix for Automotive and Other Applications Requiring65 Unique Site and Control Change Requirements;4AEC-Q101 Qualified and PPAP Capable.12MAXIMUM RATINGS3Rating Symbol Value UnitSC-
lmbt2222adw1t1g.pdf

LESHAN RADIO COMPANY, LTD.Dual General Purpose TransistorsNPN SiliconLMBT2222ADW1T1GS-LMBT2222ADW1T1G We declare that material of product compliance with ROHS requirements. S- Prefix for Automotive and Other Applications Requiring65 Unique Site and Control Change Requirements;4AEC-Q101 Qualified and PPAP Capable.12MAXIMUM RATINGS3Rating Symbol Value UnitSC-
lmbt2222alt1g lmbt2222alt3g.pdf

LMBT2222ALT1GS-LMBT2222ALT1GGeneral Purpose Transistors NPN Silicon1. FEATURES We declare that the material of product compliance withRoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101SOT23(TO-236) qualified and PPAP capable.2. DEVICE MARKING AND ORDERING INFORMATIONDev
lmbt2222awt1g.pdf

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsNPN SiliconThese transistors are designed for generalpurpose amplifier applications. They are LMBT2222AWT1Ghoused in the SOT323/SC70 package whichS-LMBT2222AWT1Gis designed for low power surface mountapplications.We declare that the material of product 3compliance with RoHS requirements.S- Prefix for Automotive a
Otros transistores... LDTA144WET1G , LDTC144WM3T5G , LDTD123YLT1G , LDTD123YLT3G , LH8050PLT3G , LH8050QLT3G , LH8550PLT3G , LH8550QLT3G , TIP41 , LMBT2222ALT3G , LMBT2222ATT3G , LMBT2907ALT3G , LMBT2907AWT3G , LMBT2907LT1G , LMBT2907LT3G , LMBT3904DW1T3G , LMBT3904LT3G .
History: BDS28CSM | 2SB214 | FHD21F | 2SB572 | 2N708-46 | 2SB649 | ETG36040D
History: BDS28CSM | 2SB214 | FHD21F | 2SB572 | 2N708-46 | 2SB649 | ETG36040D



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