All Transistors. LMBT2222ADW1T3G Datasheet

 

LMBT2222ADW1T3G Datasheet and Replacement


   Type Designator: LMBT2222ADW1T3G
   SMD Transistor Code: XX
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.15 W
   Maximum Collector-Base Voltage |Vcb|: 75 V
   Maximum Collector-Emitter Voltage |Vce|: 40 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 0.6 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 300 MHz
   Collector Capacitance (Cc): 8 pF
   Forward Current Transfer Ratio (hFE), MIN: 100
   Noise Figure, dB: -
   Package: SC88
 

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LMBT2222ADW1T3G Datasheet (PDF)

 0.1. Size:250K  lrc
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LMBT2222ADW1T3G

LESHAN RADIO COMPANY, LTD.Dual General Purpose TransistorsNPN SiliconLMBT2222ADW1T1GS-LMBT2222ADW1T1G We declare that material of product compliance with ROHS requirements. S- Prefix for Automotive and Other Applications Requiring65 Unique Site and Control Change Requirements;4AEC-Q101 Qualified and PPAP Capable.12MAXIMUM RATINGS3Rating Symbol Value UnitSC-

 1.1. Size:250K  lrc
lmbt2222adw1t1g.pdf pdf_icon

LMBT2222ADW1T3G

LESHAN RADIO COMPANY, LTD.Dual General Purpose TransistorsNPN SiliconLMBT2222ADW1T1GS-LMBT2222ADW1T1G We declare that material of product compliance with ROHS requirements. S- Prefix for Automotive and Other Applications Requiring65 Unique Site and Control Change Requirements;4AEC-Q101 Qualified and PPAP Capable.12MAXIMUM RATINGS3Rating Symbol Value UnitSC-

 5.1. Size:631K  lrc
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LMBT2222ADW1T3G

LMBT2222ALT1GS-LMBT2222ALT1GGeneral Purpose Transistors NPN Silicon1. FEATURES We declare that the material of product compliance withRoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101SOT23(TO-236) qualified and PPAP capable.2. DEVICE MARKING AND ORDERING INFORMATIONDev

 5.2. Size:62K  lrc
lmbt2222awt1g.pdf pdf_icon

LMBT2222ADW1T3G

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsNPN SiliconThese transistors are designed for generalpurpose amplifier applications. They are LMBT2222AWT1Ghoused in the SOT323/SC70 package whichS-LMBT2222AWT1Gis designed for low power surface mountapplications.We declare that the material of product 3compliance with RoHS requirements.S- Prefix for Automotive a

Datasheet: LDTA144WET1G , LDTC144WM3T5G , LDTD123YLT1G , LDTD123YLT3G , LH8050PLT3G , LH8050QLT3G , LH8550PLT3G , LH8550QLT3G , TIP41 , LMBT2222ALT3G , LMBT2222ATT3G , LMBT2907ALT3G , LMBT2907AWT3G , LMBT2907LT1G , LMBT2907LT3G , LMBT3904DW1T3G , LMBT3904LT3G .

History: 2SD146F | LH8550QLT3G | 2SD555 | BD733 | DTC044EUB | 2SC3402 | P701B

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