LMBT3904LT3G Todos los transistores

 

LMBT3904LT3G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: LMBT3904LT3G
   Código: 1AM
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.225 W
   Tensión colector-base (Vcb): 60 V
   Tensión colector-emisor (Vce): 40 V
   Tensión emisor-base (Veb): 6 V
   Corriente del colector DC máxima (Ic): 0.2 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 300 MHz
   Capacitancia de salida (Cc): 4 pF
   Ganancia de corriente contínua (hfe): 100
   Paquete / Cubierta: SOT23
 

 Búsqueda de reemplazo de LMBT3904LT3G

   - Selección ⓘ de transistores por parámetros

 

LMBT3904LT3G Datasheet (PDF)

 ..1. Size:643K  lrc
lmbt3904lt1g lmbt3904lt3g s-lmbt3904lt1g s-lmbt3904lt3g.pdf pdf_icon

LMBT3904LT3G

LESHAN RADIO COMPANY, LTD.General Purpose Transistor Pb-Free Package May be Available. The G-Suffix Denotes aLMBT3904LT1GPb-Free Lead FinishS-LMBT3904LT1G We declare that the material of product compliance with RoHSrequirements. S- Prefix for Automotive and Other Applications Requiring UniqueSite and Control Change Requirements; AEC-Q101 Qualified and3PPAP Capable

 ..2. Size:358K  lrc
lmbt3904lt1g lmbt3904lt3g.pdf pdf_icon

LMBT3904LT3G

LMBT3904LT1GS-LMBT3904LT1GGeneral Purpose Transistors NPN Silicon1. FEATURES We declare that the material of product compliance withRoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101SOT23(TO-236) qualified and PPAP capable.2. DEVICE MARKING AND ORDERING INFORMATIONDevic

 4.1. Size:590K  lrc
lmbt3904lt1g.pdf pdf_icon

LMBT3904LT3G

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsNPN SiliconFEATURESLMBT3904LT1G1) We declare that the material of product compliant with RoHS requirements and Halogen Free.S-LMBT3904LT1G2) S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q1013 Qualified and PPAP Capable. DEVICE MARKING AND RESISTOR VALU

 4.2. Size:243K  inchange semiconductor
lmbt3904lt1g.pdf pdf_icon

LMBT3904LT3G

isc Silicon NPN RF Transistor LMBT3904LT1GDESCRIPTIONLow Noise FigureNF = 5 dB(MAX)@V =5.0V, f=10Hz to 15.7kHz, I =100uA, R =1.0kCE C SMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in low noise ,high-gain amplifiersand linear broadband amplifiers.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER

Otros transistores... 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SC4793 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

History: BTB1424L3 | ECG376 | CXT5551HC | GF121 | RT1N24BS | AC154

 

 
Back to Top

 


 
.