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LMBT3904LT3G Datasheet, Equivalent, Cross Reference Search


   Type Designator: LMBT3904LT3G
   SMD Transistor Code: 1AM
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.225 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 40 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 0.2 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 300 MHz
   Collector Capacitance (Cc): 4 pF
   Forward Current Transfer Ratio (hFE), MIN: 100
   Noise Figure, dB: -
   Package: SOT23

 LMBT3904LT3G Transistor Equivalent Substitute - Cross-Reference Search

   

LMBT3904LT3G Datasheet (PDF)

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lmbt3904lt1g lmbt3904lt3g s-lmbt3904lt1g s-lmbt3904lt3g.pdf

LMBT3904LT3G
LMBT3904LT3G

LESHAN RADIO COMPANY, LTD.General Purpose Transistor Pb-Free Package May be Available. The G-Suffix Denotes aLMBT3904LT1GPb-Free Lead FinishS-LMBT3904LT1G We declare that the material of product compliance with RoHSrequirements. S- Prefix for Automotive and Other Applications Requiring UniqueSite and Control Change Requirements; AEC-Q101 Qualified and3PPAP Capable

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lmbt3904lt1g lmbt3904lt3g.pdf

LMBT3904LT3G
LMBT3904LT3G

LMBT3904LT1GS-LMBT3904LT1GGeneral Purpose Transistors NPN Silicon1. FEATURES We declare that the material of product compliance withRoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101SOT23(TO-236) qualified and PPAP capable.2. DEVICE MARKING AND ORDERING INFORMATIONDevic

 4.1. Size:590K  lrc
lmbt3904lt1g.pdf

LMBT3904LT3G
LMBT3904LT3G

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsNPN SiliconFEATURESLMBT3904LT1G1) We declare that the material of product compliant with RoHS requirements and Halogen Free.S-LMBT3904LT1G2) S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q1013 Qualified and PPAP Capable. DEVICE MARKING AND RESISTOR VALU

 4.2. Size:243K  inchange semiconductor
lmbt3904lt1g.pdf

LMBT3904LT3G
LMBT3904LT3G

isc Silicon NPN RF Transistor LMBT3904LT1GDESCRIPTIONLow Noise FigureNF = 5 dB(MAX)@V =5.0V, f=10Hz to 15.7kHz, I =100uA, R =1.0kCE C SMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in low noise ,high-gain amplifiersand linear broadband amplifiers.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER

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lmbt3904n3t5g.pdf

LMBT3904LT3G
LMBT3904LT3G

LMBT3904N3T5GS-LMBT3904N3T5GGeneral Purpose Transistors NPN Silicon1. FEATURES We declare that the material of product compliance withRoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101SOT883 qualified and PPAP capable.2. DEVICE MARKING AND ORDERING INFORMATIONDevice Mar

 6.2. Size:222K  lrc
lmbt3904tt1g lmbt3904tt3g.pdf

LMBT3904LT3G
LMBT3904LT3G

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsNPN SiliconFEATURE Simplifies Circuit Design. We declare that the material of product compliance with LMBT3904TT1GRoHS requirements.S-LMBT3904TT1G S- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.ORDERING INFORMATIONDevice Marking

 6.3. Size:221K  lrc
lmbt3904tt1g.pdf

LMBT3904LT3G
LMBT3904LT3G

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsNPN SiliconFEATURE Simplifies Circuit Design. We declare that the material of product compliance with LMBT3904TT1GRoHS requirements.S-LMBT3904TT1G S- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.ORDERING INFORMATIONDevice Marking

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lmbt3904dw1t1g lmbt3904dw1t3g.pdf

LMBT3904LT3G
LMBT3904LT3G

LMBT3904DW1T1GS-LMBT3904DW1T1GGeneral Purpose Transistors NPN Silicon1. FEATURESWe declare that the material of product compliance withRoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101SC88(SOT-363) qualified and PPAP capable.Low VCE(sat), 0.4 VSimplifi

 6.5. Size:616K  lrc
lmbt3904wt1g.pdf

LMBT3904LT3G
LMBT3904LT3G

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsNPN SiliconFEATURESLMBT3904W T1G1) We declare that the material of product compliant with RoHS requirements and Halogen Free.S-LMBT3904W T1G2) S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q1013 Qualified and PPAP Capable.1DEVICE MARKING AND RESISTOR

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lmbt3904wt1g lmbt3904wt3g.pdf

LMBT3904LT3G
LMBT3904LT3G

LMBT3904WT1GS-LMBT3904WT1GGeneral Purpose Transistors NPN Silicon1. FEATURES We declare that the material of product compliance withRoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101SC70(SOT-323) qualified and PPAP capable.2. DEVICE MARKING AND ORDERING INFORMATIONDevic

 6.7. Size:506K  lrc
lmbt3904dw1t1g.pdf

LMBT3904LT3G
LMBT3904LT3G

LESHAN RADIO COMPANY, LTD.Dual General Purpose Transistors The LMBT3904DW1T1G device is a spinoff of our popularLMBT3904DW1T1GSOT23/SOT323 threeleaded device. It is designed for generalpurpose amplifier applications and is housed in the SOT363S-LMBT3904DW1T1Gsixleaded surface mount package. By putting two discrete devicesin one package , this device is ideal fo

Datasheet: 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , 2N3055 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .

History: KTC3199M

 

 
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