LMBT5401DW1T3G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: LMBT5401DW1T3G
   Código: 2L
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

   Disipación total del dispositivo (Pc): 0.225 W
   Tensión colector-base (Vcb): 160 V
   Tensión colector-emisor (Vce): 150 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 0.5 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   Transición de frecuencia (ft): 100 MHz
   Capacitancia de salida (Cc): 6 pF
   Ganancia de corriente contínua (hfe): 60
   Paquete / Cubierta: SOT363

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LMBT5401DW1T3G Datasheet (PDF)

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lmbt5401dw1t1g lmbt5401dw1t3g.pdf

LESHAN RADIO COMPANY, LTD.DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTORLMBT5401DW1T1GFEATURES-LMBT5401DW1T1G We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.65DEVICE MARKING AND ORDERING INFORMATION 4De

2.1. Size:212K lrc
lmbt5401dw1t1g.pdf

6.1. Size:122K lrc
lmbt5401lt1g.pdf

LESHAN RADIO COMPANY, LTD.High Voltage TransistorFEATURE We declare that the material of product compliance with RoHS requirements. LMBT5401LT1G S- Prefix for Automotive and Other Applications Requiring Unique Site and S-LMBT5401LT1GControl Change Requirements; AEC-Q101 Qualified and PPAP Capable.DEVICE MARKING AND ORDERING INFORMATIONDevice Marking Shipping3LMBT5401LT1G

6.2. Size:122K lrc
lmbt5401lt1g lmbt5401lt3g.pdf