All Transistors. LMBT5401DW1T3G Datasheet

 

LMBT5401DW1T3G Datasheet and Replacement


   Type Designator: LMBT5401DW1T3G
   SMD Transistor Code: 2L
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.225 W
   Maximum Collector-Base Voltage |Vcb|: 160 V
   Maximum Collector-Emitter Voltage |Vce|: 150 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 100 MHz
   Collector Capacitance (Cc): 6 pF
   Forward Current Transfer Ratio (hFE), MIN: 60
   Noise Figure, dB: -
   Package: SOT363
 

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LMBT5401DW1T3G Datasheet (PDF)

 ..1. Size:212K  lrc
 lmbt5401dw1t1g lmbt5401dw1t3g.pdf pdf_icon

LMBT5401DW1T3G

LESHAN RADIO COMPANY, LTD.DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTORLMBT5401DW1T1GFEATURES-LMBT5401DW1T1G We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.65DEVICE MARKING AND ORDERING INFORMATION 4De

 2.1. Size:212K  lrc
 lmbt5401dw1t1g.pdf pdf_icon

LMBT5401DW1T3G

LESHAN RADIO COMPANY, LTD.DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTORLMBT5401DW1T1GFEATURES-LMBT5401DW1T1G We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.65DEVICE MARKING AND ORDERING INFORMATION 4De

 6.1. Size:122K  lrc
 lmbt5401lt1g.pdf pdf_icon

LMBT5401DW1T3G

LESHAN RADIO COMPANY, LTD.High Voltage TransistorFEATURE We declare that the material of product compliance with RoHS requirements. LMBT5401LT1G S- Prefix for Automotive and Other Applications Requiring Unique Site and S-LMBT5401LT1GControl Change Requirements; AEC-Q101 Qualified and PPAP Capable.DEVICE MARKING AND ORDERING INFORMATIONDevice Marking Shipping3LMBT5401LT1G

 6.2. Size:122K  lrc
 lmbt5401lt1g lmbt5401lt3g.pdf pdf_icon

LMBT5401DW1T3G

LESHAN RADIO COMPANY, LTD.High Voltage TransistorFEATURE We declare that the material of product compliance with RoHS requirements. LMBT5401LT1G S- Prefix for Automotive and Other Applications Requiring Unique Site and S-LMBT5401LT1GControl Change Requirements; AEC-Q101 Qualified and PPAP Capable.DEVICE MARKING AND ORDERING INFORMATIONDevice Marking Shipping3LMBT5401LT1G

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Datasheet: LMBT3906N3T5G , LMBT3906TT3G , LMBT3906WT3G , LMBT3946DW1T1G , LMBT3946DW1T3G , LMBT4401LT3G , LMBT4401WT3G , LMBT4403LT3 , 2SD1047 , LMBT5401LT3G , LMBT5541DW1T3G , LMBT5550LT1G , LMBT5550LT3G , LMBT5551DW1T3G , LMBT5551LT3G , LMBT6428LT3G , LMBT6517LT3G .

History: TS13007BCZ | KRA725U | BDY55 | MP4502 | 2SC1732 | PBSM5240PF

Keywords - LMBT5401DW1T3G transistor datasheet

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