LMBT5550LT1G Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: LMBT5550LT1G

Código: M1F

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.225 W

Tensión colector-base (Vcb): 160 V

Tensión colector-emisor (Vce): 140 V

Tensión emisor-base (Veb): 6 V

Corriente del colector DC máxima (Ic): 0.6 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hFE): 60

Encapsulados: SOT23

 Búsqueda de reemplazo de LMBT5550LT1G

- Selecciónⓘ de transistores por parámetros

 

LMBT5550LT1G datasheet

 ..1. Size:166K  lrc
 lmbt5550lt1g lmbt5551lt1g.pdf pdf_icon

LMBT5550LT1G

LESHAN RADIO COMPANY, LTD. High Voltage Transistors FEATURE We declare that the material of product compliance with RoHS requirements. LMBT5550LT1G S- Prefix for Automotive and Other Applications Requiring Unique LMBT5551LT1G Site and Control Change Requirements; AEC-Q101 Qualified and S-LMBT5550LT1G PPAP Capable. S-LMBT5551LT1G DEVICE MARKING AND ORDERING INFORMATION 3

 ..2. Size:166K  lrc
 lmbt5550lt3g lmbt5551lt3g lmbt5550lt1g lmbt5551lt1g.pdf pdf_icon

LMBT5550LT1G

LESHAN RADIO COMPANY, LTD. High Voltage Transistors FEATURE We declare that the material of product compliance with RoHS requirements. LMBT5550LT1G S- Prefix for Automotive and Other Applications Requiring Unique LMBT5551LT1G Site and Control Change Requirements; AEC-Q101 Qualified and S-LMBT5550LT1G PPAP Capable. S-LMBT5551LT1G DEVICE MARKING AND ORDERING INFORMATION 3

 7.1. Size:135K  lrc
 lmbt5551dw1t1g.pdf pdf_icon

LMBT5550LT1G

LESHAN RADIO COMPANY, LTD. DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR LMBT5551DW1T1G FEATURE We declare that the material of product compliance with RoHS requirements. S-LMBT5551DW1T1G S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. 6 DEVICE MARKING AND ORDERING INFORMATION 5 4 De

 7.2. Size:166K  lrc
 lmbt5551lt1g.pdf pdf_icon

LMBT5550LT1G

LESHAN RADIO COMPANY, LTD. High Voltage Transistors FEATURE We declare that the material of product compliance with RoHS requirements. LMBT5550LT1G S- Prefix for Automotive and Other Applications Requiring Unique LMBT5551LT1G Site and Control Change Requirements; AEC-Q101 Qualified and S-LMBT5550LT1G PPAP Capable. S-LMBT5551LT1G DEVICE MARKING AND ORDERING INFORMATION 3

MOSTRAR MÁS

Otros transistores... LMBT3946DW1T1G, LMBT3946DW1T3G, LMBT4401LT3G, LMBT4401WT3G, LMBT4403LT3, LMBT5401DW1T3G, LMBT5401LT3G, LMBT5541DW1T3G, 2SD1047, LMBT5550LT3G, LMBT5551DW1T3G, LMBT5551LT3G, LMBT6428LT3G, LMBT6517LT3G, LMBT6520LT3G, LMBTA42LT3G, LMBTA43LT3G