Справочник транзисторов. LMBT5550LT1G

 

Биполярный транзистор LMBT5550LT1G Даташит. Аналоги


   Наименование производителя: LMBT5550LT1G
   Маркировка: M1F
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 0.225 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 160 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 140 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V
   Макcимальный постоянный ток коллектора (Ic): 0.6 A
   Предельная температура PN-перехода (Tj): 150 °C
   Статический коэффициент передачи тока (hfe): 60
   Корпус транзистора: SOT23
 

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LMBT5550LT1G Datasheet (PDF)

 ..1. Size:166K  lrc
lmbt5550lt1g lmbt5551lt1g.pdfpdf_icon

LMBT5550LT1G

LESHAN RADIO COMPANY, LTD.High Voltage TransistorsFEATURE We declare that the material of product compliance with RoHS requirements. LMBT5550LT1G S- Prefix for Automotive and Other Applications Requiring Unique LMBT5551LT1GSite and Control Change Requirements; AEC-Q101 Qualified and S-LMBT5550LT1GPPAP Capable.S-LMBT5551LT1GDEVICE MARKING AND ORDERING INFORMATION3

 ..2. Size:166K  lrc
lmbt5550lt3g lmbt5551lt3g lmbt5550lt1g lmbt5551lt1g.pdfpdf_icon

LMBT5550LT1G

LESHAN RADIO COMPANY, LTD.High Voltage TransistorsFEATURE We declare that the material of product compliance with RoHS requirements. LMBT5550LT1G S- Prefix for Automotive and Other Applications Requiring Unique LMBT5551LT1GSite and Control Change Requirements; AEC-Q101 Qualified and S-LMBT5550LT1GPPAP Capable.S-LMBT5551LT1GDEVICE MARKING AND ORDERING INFORMATION3

 7.1. Size:135K  lrc
lmbt5551dw1t1g.pdfpdf_icon

LMBT5550LT1G

LESHAN RADIO COMPANY, LTD.DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTORLMBT5551DW1T1GFEATURE We declare that the material of product compliance with RoHS requirements. S-LMBT5551DW1T1G S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.6DEVICE MARKING AND ORDERING INFORMATION54De

 7.2. Size:166K  lrc
lmbt5551lt1g.pdfpdf_icon

LMBT5550LT1G

LESHAN RADIO COMPANY, LTD.High Voltage TransistorsFEATURE We declare that the material of product compliance with RoHS requirements. LMBT5550LT1G S- Prefix for Automotive and Other Applications Requiring Unique LMBT5551LT1GSite and Control Change Requirements; AEC-Q101 Qualified and S-LMBT5550LT1GPPAP Capable.S-LMBT5551LT1GDEVICE MARKING AND ORDERING INFORMATION3

Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , BC546 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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