LMBT5550LT1G Datasheet PDF and Replacements, Transistor Equivalent Finder, Cross Reference

LMBT5550LT1G Datasheet. Specs and Replacement

Type Designator: LMBT5550LT1G

SMD Transistor Code: M1F

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.225 W

Maximum Collector-Base Voltage |Vcb|: 160 V

Maximum Collector-Emitter Voltage |Vce|: 140 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 0.6 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 60

Noise Figure, dB: -

Package: SOT23

LMBT5550LT1G Substitution

- BJT ⓘ Cross-Reference Search

LMBT5550LT1G datasheet

..1. Size:166K lrc

lmbt5550lt1g lmbt5551lt1g.pdf pdf_icon

LESHAN RADIO COMPANY, LTD. High Voltage Transistors FEATURE We declare that the material of product compliance with RoHS requirements. LMBT5550LT1G S- Prefix for Automotive and Other Applications Requiring Unique LMBT5551LT1G Site and Control Change Requirements; AEC-Q101 Qualified and S-LMBT5550LT1G PPAP Capable. S-LMBT5551LT1G DEVICE MARKING AND ORDERING INFORMATION 3 ... See More ⇒

..2. Size:166K lrc

lmbt5550lt3g lmbt5551lt3g lmbt5550lt1g lmbt5551lt1g.pdf pdf_icon

7.1. Size:135K lrc

lmbt5551dw1t1g.pdf pdf_icon

LESHAN RADIO COMPANY, LTD. DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR LMBT5551DW1T1G FEATURE We declare that the material of product compliance with RoHS requirements. S-LMBT5551DW1T1G S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. 6 DEVICE MARKING AND ORDERING INFORMATION 5 4 De... See More ⇒

7.2. Size:166K lrc

lmbt5551lt1g.pdf pdf_icon