MMBTH10-04LT1G Todos los transistores

 

MMBTH10-04LT1G Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MMBTH10-04LT1G
   Código: 3E4*
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.225 W
   Tensión colector-base (Vcb): 30 V
   Tensión colector-emisor (Vce): 25 V
   Tensión emisor-base (Veb): 3 V
   Corriente del colector DC máxima (Ic): 0.01 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 800 MHz
   Capacitancia de salida (Cc): 0.7 pF
   Ganancia de corriente contínua (hfe): 120
   Paquete / Cubierta: SOT23

 Búsqueda de reemplazo de transistor bipolar MMBTH10-04LT1G

 

Principales características: MMBTH10-04LT1G

 ..1. Size:151K  onsemi
mmbth10lt1g mmbth10-04lt1g nsvmmbth10lt1g.pdf pdf_icon

MMBTH10-04LT1G

MMBTH10L, MMBTH10-4L, SMMBTH10-4L, NSVMMBTH10L VHF/UHF Transistor www.onsemi.com NPN Silicon Features S and NSV Prefixes for Automotive and Other Applications SOT-23 (TO-236) Requiring Unique Site and Control Change Requirements; CASE 318 AEC-Q101 Qualified and PPAP Capable STYLE 6 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS COLLECTOR Compliant 3 1 M

 ..2. Size:204K  onsemi
mmbth10lt1g nsvmmbth10lt1g mmbth10-04lt1g.pdf pdf_icon

MMBTH10-04LT1G

ON Semiconductor Is Now To learn more about onsemi , please visit our website at www.onsemi.com onsemi and and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks,

 6.1. Size:102K  onsemi
mmbth10-4lt1g.pdf pdf_icon

MMBTH10-04LT1G

MMBTH10LT1G, NSVMMBTH10LT1G, MMBTH10LT3G, MMBTH10-4LT1G VHF/UHF Transistor http //onsemi.com NPN Silicon Features AEC-Q101 Qualified and PPAP Capable SOT-23 (TO-236) NSV Prefix for Automotive and Other Applications Requiring CASE 318 Unique Site and Control Change Requirements STYLE 6 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS COLLECTOR Compliant*

 6.2. Size:91K  onsemi
mmbth10l mmbth10-4l smmbth10-4l nsvmmbth10l.pdf pdf_icon

MMBTH10-04LT1G

MMBTH10L, MMBTH10-4L, SMMBTH10-4L, NSVMMBTH10L VHF/UHF Transistor www.onsemi.com NPN Silicon Features S and NSV Prefixes for Automotive and Other Applications SOT-23 (TO-236) Requiring Unique Site and Control Change Requirements; CASE 318 AEC-Q101 Qualified and PPAP Capable STYLE 6 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS COLLECTOR Compliant 3 1 M

Otros transistores... MBT6429DW1T1G , MJ14001G , MJE350G , MMBT5401LT3G , MMBT5401M3 , MMBTA42LT , MMBTA43L , MMBTA93L , TIP41C , MMJT350 , MPSA42G , MPSA42RL1G , MPSA42RLRAG , MPSA42RLRMG , MPSA42RLRPG , MPSA42ZL1G , MSB1218A .

 

 
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