MMBTH10-04LT1G
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MMBTH10-04LT1G
Código: 3E4*
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.225
W
Tensión colector-base (Vcb): 30
V
Tensión colector-emisor (Vce): 25
V
Tensión emisor-base (Veb): 3
V
Corriente del colector DC máxima (Ic): 0.01
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 800
MHz
Capacitancia de salida (Cc): 0.7
pF
Ganancia de corriente contínua (hfe): 120
Paquete / Cubierta:
SOT23
Búsqueda de reemplazo de transistor bipolar MMBTH10-04LT1G
MMBTH10-04LT1G
Datasheet (PDF)
..1. Size:151K onsemi
mmbth10lt1g mmbth10-04lt1g nsvmmbth10lt1g.pdf
MMBTH10L,MMBTH10-4L,SMMBTH10-4L,NSVMMBTH10LVHF/UHF Transistorwww.onsemi.comNPN SiliconFeatures S and NSV Prefixes for Automotive and Other ApplicationsSOT-23 (TO-236)Requiring Unique Site and Control Change Requirements;CASE 318AEC-Q101 Qualified and PPAP CapableSTYLE 6 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCOLLECTORCompliant31M
..2. Size:204K onsemi
mmbth10lt1g nsvmmbth10lt1g mmbth10-04lt1g.pdf
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6.1. Size:102K onsemi
mmbth10-4lt1g.pdf
MMBTH10LT1G,NSVMMBTH10LT1G,MMBTH10LT3G,MMBTH10-4LT1GVHF/UHF Transistorhttp://onsemi.comNPN SiliconFeatures AEC-Q101 Qualified and PPAP CapableSOT-23 (TO-236) NSV Prefix for Automotive and Other Applications RequiringCASE 318Unique Site and Control Change Requirements STYLE 6 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCOLLECTORCompliant*
6.2. Size:91K onsemi
mmbth10l mmbth10-4l smmbth10-4l nsvmmbth10l.pdf
MMBTH10L,MMBTH10-4L,SMMBTH10-4L,NSVMMBTH10LVHF/UHF Transistorwww.onsemi.comNPN SiliconFeatures S and NSV Prefixes for Automotive and Other ApplicationsSOT-23 (TO-236)Requiring Unique Site and Control Change Requirements;CASE 318AEC-Q101 Qualified and PPAP CapableSTYLE 6 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCOLLECTORCompliant31M
6.3. Size:123K onsemi
mmbth10lt1 mmbth10-4lt1.pdf
MMBTH10LT1G,MMBTH10-4LT1GVHF/UHF TransistorNPN SiliconFeatureshttp://onsemi.com These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCOLLECTORCompliant31MAXIMUM RATINGSBASERating Symbol Value Unit2Collector-Emitter Voltage VCEO 25 VdcEMITTERCollector-Base Voltage VCBO 30 VdcEmitter-Base Voltage VEBO 3.0 Vdc3THERMAL CHARACTERISTICS1Character
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