MMBTH10-04LT1G Datasheet PDF and Replacements, Transistor Equivalent Finder, Cross Reference

MMBTH10-04LT1G Datasheet. Specs and Replacement

Type Designator: MMBTH10-04LT1G 📄📄

SMD Transistor Code: 3E4*

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.225 W

Maximum Collector-Base Voltage |Vcb|: 30 V

Maximum Collector-Emitter Voltage |Vce|: 25 V

Maximum Emitter-Base Voltage |Veb|: 3 V

Maximum Collector Current |Ic max|: 0.01 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 800 MHz

Collector Capacitance (Cc): 0.7 pF

Forward Current Transfer Ratio (hFE), MIN: 120

Noise Figure, dB: -

Package: SOT23

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MMBTH10-04LT1G datasheet

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