All Transistors. MMBTH10-04LT1G Datasheet

 

MMBTH10-04LT1G Datasheet, Equivalent, Cross Reference Search


   Type Designator: MMBTH10-04LT1G
   SMD Transistor Code: 3E4*
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.225 W
   Maximum Collector-Base Voltage |Vcb|: 30 V
   Maximum Collector-Emitter Voltage |Vce|: 25 V
   Maximum Emitter-Base Voltage |Veb|: 3 V
   Maximum Collector Current |Ic max|: 0.01 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 800 MHz
   Collector Capacitance (Cc): 0.7 pF
   Forward Current Transfer Ratio (hFE), MIN: 120
   Noise Figure, dB: -
   Package: SOT23

 MMBTH10-04LT1G Transistor Equivalent Substitute - Cross-Reference Search

   

MMBTH10-04LT1G Datasheet (PDF)

 ..1. Size:151K  onsemi
mmbth10lt1g mmbth10-04lt1g nsvmmbth10lt1g.pdf

MMBTH10-04LT1G
MMBTH10-04LT1G

MMBTH10L,MMBTH10-4L,SMMBTH10-4L,NSVMMBTH10LVHF/UHF Transistorwww.onsemi.comNPN SiliconFeatures S and NSV Prefixes for Automotive and Other ApplicationsSOT-23 (TO-236)Requiring Unique Site and Control Change Requirements;CASE 318AEC-Q101 Qualified and PPAP CapableSTYLE 6 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCOLLECTORCompliant31M

 ..2. Size:204K  onsemi
mmbth10lt1g nsvmmbth10lt1g mmbth10-04lt1g.pdf

MMBTH10-04LT1G
MMBTH10-04LT1G

ON SemiconductorIs NowTo learn more about onsemi, please visit our website at www.onsemi.comonsemi and and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks,

 6.1. Size:102K  onsemi
mmbth10-4lt1g.pdf

MMBTH10-04LT1G
MMBTH10-04LT1G

MMBTH10LT1G,NSVMMBTH10LT1G,MMBTH10LT3G,MMBTH10-4LT1GVHF/UHF Transistorhttp://onsemi.comNPN SiliconFeatures AEC-Q101 Qualified and PPAP CapableSOT-23 (TO-236) NSV Prefix for Automotive and Other Applications RequiringCASE 318Unique Site and Control Change Requirements STYLE 6 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCOLLECTORCompliant*

 6.2. Size:91K  onsemi
mmbth10l mmbth10-4l smmbth10-4l nsvmmbth10l.pdf

MMBTH10-04LT1G
MMBTH10-04LT1G

MMBTH10L,MMBTH10-4L,SMMBTH10-4L,NSVMMBTH10LVHF/UHF Transistorwww.onsemi.comNPN SiliconFeatures S and NSV Prefixes for Automotive and Other ApplicationsSOT-23 (TO-236)Requiring Unique Site and Control Change Requirements;CASE 318AEC-Q101 Qualified and PPAP CapableSTYLE 6 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCOLLECTORCompliant31M

 6.3. Size:123K  onsemi
mmbth10lt1 mmbth10-4lt1.pdf

MMBTH10-04LT1G
MMBTH10-04LT1G

MMBTH10LT1G,MMBTH10-4LT1GVHF/UHF TransistorNPN SiliconFeatureshttp://onsemi.com These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCOLLECTORCompliant31MAXIMUM RATINGSBASERating Symbol Value Unit2Collector-Emitter Voltage VCEO 25 VdcEMITTERCollector-Base Voltage VCBO 30 VdcEmitter-Base Voltage VEBO 3.0 Vdc3THERMAL CHARACTERISTICS1Character

Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

 

 
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