MSB1218A Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MSB1218A

Código: BR*

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.15 W

Tensión colector-base (Vcb): 45 V

Tensión colector-emisor (Vce): 45 V

Tensión emisor-base (Veb): 7 V

Corriente del colector DC máxima (Ic): 0.1 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hFE): 210

Encapsulados: SOT323

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MSB1218A datasheet

 ..1. Size:156K  motorola
msb1218a.pdf pdf_icon

MSB1218A

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MSB1218A RT1/D PNP Silicon General Purpose MSB1218A-RT1 Amplifier Transistor MSB1218A-ST1 This PNP Silicon Epitaxial Planar Transistor is designed for general purpose Motorola Preferred Devices amplifier applications. This device is housed in the SC 70/SOT 323 package which is designed for low power surface mount appl

 ..2. Size:201K  onsemi
msb1218a rt1g.pdf pdf_icon

MSB1218A

MSB1218A--RT1G PNP Silicon General Purpose Amplifier Transistor This PNP Silicon Epitaxial Planar Transistor is designed for general purpose amplifier applications. This device is housed in the SC--70/SOT--323 package which is designed for low power surface http //onsemi.com mount applications. COLLECTOR Features 3 High hFE, 210 -- 460 Low VCE(sat),

 0.1. Size:117K  onsemi
msb1218a-rt1-d.pdf pdf_icon

MSB1218A

MSB1218A--RT1G PNP Silicon General Purpose Amplifier Transistor This PNP Silicon Epitaxial Planar Transistor is designed for general purpose amplifier applications. This device is housed in the SC--70/SOT--323 package which is designed for low power surface http //onsemi.com mount applications. COLLECTOR Features 3 High hFE, 210 -- 460 Low VCE(sat),

 0.2. Size:119K  onsemi
msb1218a-rt1.pdf pdf_icon

MSB1218A

MSB1218A--RT1G PNP Silicon General Purpose Amplifier Transistor This PNP Silicon Epitaxial Planar Transistor is designed for general purpose amplifier applications. This device is housed in the SC--70/SOT--323 package which is designed for low power surface http //onsemi.com mount applications. COLLECTOR Features 3 High hFE, 210 -- 460 Low VCE(sat),

Otros transistores... MMBTH10-04LT1G, MMJT350, MPSA42G, MPSA42RL1G, MPSA42RLRAG, MPSA42RLRMG, MPSA42RLRPG, MPSA42ZL1G, 2N3055, MSB92AS1WT1G, MSC2712YT1G, MSD601-RT1, MSD601-ST1, NJV4030P, NJVMJB44H11, NJVMJB45H11, NJVMJD31CT4G-VF01