All Transistors. MSB1218A Datasheet

 

MSB1218A Datasheet and Replacement


   Type Designator: MSB1218A
   SMD Transistor Code: BR*
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.15 W
   Maximum Collector-Base Voltage |Vcb|: 45 V
   Maximum Collector-Emitter Voltage |Vce|: 45 V
   Maximum Emitter-Base Voltage |Veb|: 7 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 210
   Noise Figure, dB: -
   Package: SOT323
 

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MSB1218A Datasheet (PDF)

 ..1. Size:156K  motorola
 msb1218a.pdf pdf_icon

MSB1218A

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MSB1218ART1/DPNP Silicon General PurposeMSB1218A-RT1Amplifier TransistorMSB1218A-ST1This PNP Silicon Epitaxial Planar Transistor is designed for general purposeMotorola Preferred Devicesamplifier applications. This device is housed in the SC70/SOT323 packagewhich is designed for low power surface mount appl

 ..2. Size:201K  onsemi
 msb1218a rt1g.pdf pdf_icon

MSB1218A

MSB1218A--RT1GPNP Silicon GeneralPurpose AmplifierTransistorThis PNP Silicon Epitaxial Planar Transistor is designed for generalpurpose amplifier applications. This device is housed in theSC--70/SOT--323 package which is designed for low power surfacehttp://onsemi.commount applications.COLLECTORFeatures3 High hFE, 210 -- 460 Low VCE(sat),

 0.1. Size:117K  onsemi
 msb1218a-rt1-d.pdf pdf_icon

MSB1218A

MSB1218A--RT1GPNP Silicon GeneralPurpose AmplifierTransistorThis PNP Silicon Epitaxial Planar Transistor is designed for generalpurpose amplifier applications. This device is housed in theSC--70/SOT--323 package which is designed for low power surfacehttp://onsemi.commount applications.COLLECTORFeatures3 High hFE, 210 -- 460 Low VCE(sat),

 0.2. Size:119K  onsemi
 msb1218a-rt1.pdf pdf_icon

MSB1218A

MSB1218A--RT1GPNP Silicon GeneralPurpose AmplifierTransistorThis PNP Silicon Epitaxial Planar Transistor is designed for generalpurpose amplifier applications. This device is housed in theSC--70/SOT--323 package which is designed for low power surfacehttp://onsemi.commount applications.COLLECTORFeatures3 High hFE, 210 -- 460 Low VCE(sat),

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Keywords - MSB1218A transistor datasheet

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