NSVF6001SB6 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NSVF6001SB6
Código: HGA*
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.8 W
Tensión colector-base (Vcb): 20 V
Tensión colector-emisor (Vce): 12 V
Tensión emisor-base (Veb): 2 V
Corriente del colector DC máxima (Ic): 0.1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 5000 MHz
Capacitancia de salida (Cc): 0.95 pF
Ganancia de corriente contínua (hfe): 90
Paquete / Cubierta: CPH6
Búsqueda de reemplazo de transistor bipolar NSVF6001SB6
NSVF6001SB6 Datasheet (PDF)
nsvf6001sb6.pdf
RF Transistor 12 V, 100 mA, fT = 6.7 GHz,NPN SingleNSVF6001SB6This RF transistor is designed for low noise amplifier applications.CPH package is suitable for use under high temperature environmentwww.onsemi.combecause it has superior heat radiation characteristics. This RFtransistor is AEC-Q101 qualified and PPAP capable for automotive65applications.412Features3
nsvf6003sb6.pdf
NSVF6003SB6 RF Transistor 12 V, 150 mA, fT = 7 GHz, NPN Single This RF transistor is designed for low noise amplifier applications. CPH www.onsemi.com package is suitable for use under high temperature environment because it has superior heat radiation characteristics. This RF transistor is AEC-Q101 qualified and PPAP capable for automotive applications. 12 V, 150 mA Features
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