NSVF6001SB6 Datasheet, Equivalent, Cross Reference Search
Type Designator: NSVF6001SB6
SMD Transistor Code: HGA*
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.8 W
Maximum Collector-Base Voltage |Vcb|: 20 V
Maximum Collector-Emitter Voltage |Vce|: 12 V
Maximum Emitter-Base Voltage |Veb|: 2 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 5000 MHz
Collector Capacitance (Cc): 0.95 pF
Forward Current Transfer Ratio (hFE), MIN: 90
Noise Figure, dB: -
Package: CPH6
NSVF6001SB6 Transistor Equivalent Substitute - Cross-Reference Search
NSVF6001SB6 Datasheet (PDF)
nsvf6001sb6.pdf
RF Transistor 12 V, 100 mA, fT = 6.7 GHz,NPN SingleNSVF6001SB6This RF transistor is designed for low noise amplifier applications.CPH package is suitable for use under high temperature environmentwww.onsemi.combecause it has superior heat radiation characteristics. This RFtransistor is AEC-Q101 qualified and PPAP capable for automotive65applications.412Features3
nsvf6003sb6.pdf
NSVF6003SB6 RF Transistor 12 V, 150 mA, fT = 7 GHz, NPN Single This RF transistor is designed for low noise amplifier applications. CPH www.onsemi.com package is suitable for use under high temperature environment because it has superior heat radiation characteristics. This RF transistor is AEC-Q101 qualified and PPAP capable for automotive applications. 12 V, 150 mA Features
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
