NSVF6001SB6 Specs and Replacement

Type Designator: NSVF6001SB6

SMD Transistor Code: HGA*

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.8 W

Maximum Collector-Base Voltage |Vcb|: 20 V

Maximum Collector-Emitter Voltage |Vce|: 12 V

Maximum Emitter-Base Voltage |Veb|: 2 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 5000 MHz

Collector Capacitance (Cc): 0.95 pF

Forward Current Transfer Ratio (hFE), MIN: 90

Noise Figure, dB: -

Package: CPH6

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NSVF6001SB6 datasheet

 ..1. Size:862K  onsemi

 nsvf6001sb6.pdf pdf_icon

NSVF6001SB6

RF Transistor 12 V, 100 mA, fT = 6.7 GHz, NPN Single NSVF6001SB6 This RF transistor is designed for low noise amplifier applications. CPH package is suitable for use under high temperature environment www.onsemi.com because it has superior heat radiation characteristics. This RF transistor is AEC-Q101 qualified and PPAP capable for automotive 6 5 applications. 4 1 2 Features 3 ... See More ⇒

 7.1. Size:373K  onsemi

 nsvf6003sb6.pdf pdf_icon

NSVF6001SB6

NSVF6003SB6 RF Transistor 12 V, 150 mA, fT = 7 GHz, NPN Single This RF transistor is designed for low noise amplifier applications. CPH www.onsemi.com package is suitable for use under high temperature environment because it has superior heat radiation characteristics. This RF transistor is AEC-Q101 qualified and PPAP capable for automotive applications. 12 V, 150 mA Features ... See More ⇒

Detailed specifications: NSVBT2222ADW1, NSVF3007SG3, NSVF4009SG4, NSVF4015SG4, NSVF4017SG4, NSVF4020SG4, NSVF5488SK, NSVF5490SK, D209L, NSVF6003SB6, NSVMBT3904DW1, NSVMMBT5401L, NSVMMBT6520L, NSVMMBTH10L, NSVMSD1819A-RT1G, NSVS50030SB3, NSVS50031SB3

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