NSVS50031SB3 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NSVS50031SB3
Código: HCE*
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 1.1 W
Tensión colector-base (Vcb): 100 V
Tensión colector-emisor (Vce): 50 V
Tensión emisor-base (Veb): 6 V
Corriente del colector DC máxima (Ic): 3 A
Temperatura operativa máxima (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 380(typ) MHz
Capacitancia de salida (Cc): 13 pF
Ganancia de corriente contínua (hfe): 200
Paquete / Cubierta: CPH3
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NSVS50031SB3 Datasheet (PDF)
nsvs50030sb3, nsvs50031sb3.pdf
NSVS50030SB3,NSVS50031SB3Bipolar Transistor (-)50 V,(-)3 A, Low VCE(sat),(PNP)NPN Singlewww.onsemi.comThis device is bipolar junction transistor featuring high current, lowsaturation voltage, and high speed switching.ELECTRICAL CONNECTIONSuitable for motor driver, relay driver, DC-DC converter ofautomotive applications. AEC-Q101qualified and PPAP capable.3 3Features1 1
nsvs50030sb3 nsvs50031sb3.pdf
NSVS50030SB3,NSVS50031SB3Bipolar Transistor (-)50 V,(-)3 A, Low VCE(sat),(PNP)NPN Singlewww.onsemi.comThis device is bipolar junction transistor featuring high current, lowsaturation voltage, and high speed switching.ELECTRICAL CONNECTIONSuitable for motor driver, relay driver, DC-DC converter ofautomotive applications. AEC-Q101qualified and PPAP capable.3 3Features1 1
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