NSVS50031SB3 Specs and Replacement

Type Designator: NSVS50031SB3

SMD Transistor Code: HCE*

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 1.1 W

Maximum Collector-Base Voltage |Vcb|: 100 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 3 A

Max. Operating Junction Temperature (Tj): 175 °C

Electrical Characteristics

Transition Frequency (ft): 380 typ MHz

Collector Capacitance (Cc): 13 pF

Forward Current Transfer Ratio (hFE), MIN: 200

Noise Figure, dB: -

Package: CPH3

 NSVS50031SB3 Substitution

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NSVS50031SB3 datasheet

 ..1. Size:163K  onsemi

 nsvs50030sb3, nsvs50031sb3.pdf pdf_icon

NSVS50031SB3

NSVS50030SB3, NSVS50031SB3 Bipolar Transistor (-)50 V, (-)3 A, Low VCE(sat), (PNP)NPN Single www.onsemi.com This device is bipolar junction transistor featuring high current, low saturation voltage, and high speed switching. ELECTRICAL CONNECTION Suitable for motor driver, relay driver, DC-DC converter of automotive applications. AEC-Q101qualified and PPAP capable. 3 3 Features 1 1... See More ⇒

 ..2. Size:162K  onsemi

 nsvs50030sb3 nsvs50031sb3.pdf pdf_icon

NSVS50031SB3

NSVS50030SB3, NSVS50031SB3 Bipolar Transistor (-)50 V, (-)3 A, Low VCE(sat), (PNP)NPN Single www.onsemi.com This device is bipolar junction transistor featuring high current, low saturation voltage, and high speed switching. ELECTRICAL CONNECTION Suitable for motor driver, relay driver, DC-DC converter of automotive applications. AEC-Q101qualified and PPAP capable. 3 3 Features 1 1... See More ⇒

Detailed specifications: NSVF6001SB6, NSVF6003SB6, NSVMBT3904DW1, NSVMMBT5401L, NSVMMBT6520L, NSVMMBTH10L, NSVMSD1819A-RT1G, NSVS50030SB3, BC549, NSVT1418L, NSVUMC2NT1G, NSVUMC3NT1G, NSVUMC5NT2G, NSVUMZ1NT1G, PN2222ABU, PN2222ATA, PN2222ATF

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